硅基底上外延生长过渡金属硅化物薄膜的研究

王金良

硅基底上外延生长过渡金属硅化物薄膜的研究

王金良

北京航空航天大学理学院, 北京 100083

详细信息

作者简介:
王金良(1964-),男,新疆喀什人,副教授, wangjinliang@buaa.edu.cn.

中图分类号: O 484.1; O 4845
计量
- 文章访问数: 2954
- HTML全文浏览量: 125
- PDF下载量: 1147
- 被引次数: 0
出版历程
- 收稿日期: 2003-07-15
- 网络出版日期: 2005-01-31

Study of transition metal silicides thin film epitaxial growth on silicon substrate

Wang Jinliang

School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China

摘要

摘要: 过渡金属与硅的接触系统一直被人们所关注,是因为它们在界面处具有肖特基势垒的形成、过渡金属硅化物的外延生长、制作器件的稳定和耐高温等重要性.因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业.对硅衬底上蒸发的Cr、Fe、Mn薄膜进行热处理,通过固相反应法(SPR)制备过渡金属硅化物薄膜,即经过对过渡金属硅化物(薄膜)/Si系统进行各种温度、不同时间的热处理,制备出各种过渡金属硅化物薄膜.对于制成的各种硅化物薄膜,用X射线衍射法(XRD)和软X射线发射分光光谱法(SXES)对它们的组成成分进行了分析和确认.并且,由这两种分析方法表明:各种过渡金属硅化物薄膜在硅衬底上各形成了单一相的均匀层硅化物薄膜.
- 固相反应 /
- 硅化物 /
- 薄膜生长 /
- X射线衍射 /
- 软X射线发射光谱
Abstract: Transition metal(TM)-silicon contact systems have received special interest because of their importance in Schottky barrier formation, epitaxial growth, device reliability, refractoriness, etc. The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry. Transition metal silicides were grown by solid phase reaction(SPR) for thin Cr, Mn, Fe films on n-Si(100) substrate systems. The formation of silicides from the reaction between deposited thin metal films and Si substrates at thermally annealling. They were identified by either X-ray diffraction(XRD) or soft x-ray emission spectroscopy(SXES). From these results it can be concluded that those silicides’s thin films grow with single phase on the silicon substrate.
- solid phase reactions /
- silicides /
- thin film growth /
- X-ray diffraction /
- soft X-ray emission spectroscopy

HTML全文

参考文献(1)

[1] Bost M C, Mahan J E. Optical properties of semiconducting iron disilicide thin film [J]. J Appl Phys, 1985, 58(7):2696~2703 [2] Zhang L, Ivey D G. Low temperature reaction of thin layers of Mn with Si [J]. J Mater Res, 1991, 6(7):1518~1531 [3] Wang J L, Hirai M, Kusaka M, et al. Valence band density of states of the manganese silicides studied by soft X-ray emission spectroscopy [J]. J Phys Soc Jpn, 1998, 67(1):230~233 [4] Wang J L, Hirai M, Kusaka M, et al. Mn(thin-film)/Si(substrate) contacts:analysis of the buried interface by soft X-ray emission spectroscopy[J]. Jpn J Appl Phys, 1999, 38:198~200 [5] Wang J L, Wang Tianmin. Transition metal (thin film)/Si(substrate) contacts:buried interface study by soft X-ray emission spectroscopy [J]. Material Science and Engineering B, 2000, 72:156~159 [6] 韩永召,李炳宗,茹国平,等. SiO_x调制的三元硅化物(Co_1-xNi)Si₂外延[J]. 半导体学报,2001,22(10):1269~1273 Han Yongzhao, Li Bingzong, Ru Guoping, et al. SiO_x mediated epitaxial ternary silicide (Co_1-xNi)Si₂[J]. Chinese Journal of Semiconductors, 2001,22(10):1269~1273(in Chinese) [7] 杨君玲,陈诺夫,刘志凯,等. 离子束外延生长半导体性锰硅化合物[J]. 半导体学报,2001,22(11):1429~1433 Yang Junling, Chen Nuofu, Liu Zhikai, et al. The growth of semiconductive manganese silicide by ion beam epitaxy[J]. Chinese Journal of Semiconductors, 2001,22(11):1429~1433(in Chinese) [8] 李晓娜,聂冬,董闯,等. C掺杂对离子注入合成β-FeSi₂薄膜的影响[J]. 半导体学报,2001,22(12):1507~1515 Li Xiaona, Nie Dong, Dong Chuang, et al. Influences of carbon doping on β-FeSi2 film synthesized by ion implantation[J]. Chinese Journal of Semiconductors, 2001,22(12):1507~1515(in Chinese) [9] Iwami M, Hirai M, Kusaka M, et al. Construction of soft X-ray emission spectroscopy (SXES) apparatus and its application for study of electronic and atomic structures of a multiplayer system[J]. Jpn J Appl Phys, 1990, 29(7):1353~1355 [10] Wang J L, Hirai M, Kusaka M, et al. Preparation of manganese silicide thin film by solid phase reaction[J] pplied Surface Science, 1997, 113/114:53~56

施引文献

资源附件(0)

访问统计