留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

硅通孔中电致应力的有限元分析

苏飞 卢子兴 刘萍 王渊

苏飞, 卢子兴, 刘萍, 等 . 硅通孔中电致应力的有限元分析[J]. 北京航空航天大学学报, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646
引用本文: 苏飞, 卢子兴, 刘萍, 等 . 硅通孔中电致应力的有限元分析[J]. 北京航空航天大学学报, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646
Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)
Citation: Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)

硅通孔中电致应力的有限元分析

doi: 10.13700/j.bh.1001-5965.2013.0646
基金项目: 国家自然科学基金资助项目(11172027,11372024)
详细信息
    作者简介:

    苏飞(1968-),男,河南安阳人,副教授,sufei@buaa.edu.cn.

  • 中图分类号: TN406;V257

Finite element analysis of electromigration induced stress in through-silicon-via

  • 摘要: 在三维电子封装中,硅通孔(TSV,Through-Silicon-Via)是实现芯片垂直互连的关键环节,其可靠性至关重要.随着硅通孔中电流密度的增大,电致应力对TSV可靠性的影响也越来越大.基于该耦合方程和有限元的一般原理,详细地推导了弹性材料属性下TSV内部的电致应力、应变的有限元分析模型;利用ABAQUS中的用户自定义单元(user defining element)接口,实现了该模型的有限元计算,并利用解析解对该有限元模型的正确性进行了验证.利用有限元模型对TSV中铜填充的电迁移问题进行了分析计算,描述了铜填充在电迁移过程中电致应力、应变以及空位浓度的演化过程和分布规律,为三维电子封装可靠性的全面评估提供了一定的依据.

     

  • [1] Tan Y C,Tan C M,Zhang X W,et al.Electromigration performance of through silicon via(TSV)-a modeling approach.[J].Microelectronics Reliability,2010,50(9-11):1336-1340
    [2] Pak J,Pathak M,Lim S K,et al.Modeling of electromigration in through-silicon-via based 3D IC[C]//Electronic Components and Technology Conference (ECTC).Piscataway,NJ:Institute of Electrical and Electronics Engineers Inc,2011:1420-1427
    [3] 杨卫.力电失效学[M].北京:清华大学出版社,2001 Yang Wei.Mechatronic reliability[M].Beijing:Tsinghua University Press,2001(in Chinese)
    [4] Blech I A.Electromigration in thin aluminum films on titanium nitride[J].Journal of Applied Physics,1976,47(4):1203-1208
    [5] Blech I A,Herring C.Stress generation by electromigration[J].Applied Physics Letters,1976,29(3):131-133
    [6] Wang P C,Cargill G S,Noyan I C,et al.Electromigration-induced stress in aluminum conductor lines measured by x-ray microdiffraction[J].Applied Physics Letters,1998,72(11):1296-1298
    [7] Basaran C,Lin M.Electromigration induced strain field simulations for nanoelectronics lead-free solder joints [J].International Journal of Solids and Structures,2007,44(14/15):4909-4924
    [8] Xu L H,Pang J H L.In-situ electromigration study on Sn-Ag-Cu solder joint by digital image speckle analysis[J].Journal of Electronic Materials,2006,35(11):1993-1999
    [9] Ye H,Basaran C,Hopkins D C.Numerical simulation of stress evolution during electromigration in IC interconnect lines[J].IEEE Transactions on Component and Packaging Technologies,2003,26(3):673-681
    [10] Sarychev M E,Zhinikov Y V,Borucki L,et al.General model for mechanical stress evolution during electromigration[J].Journal of Applied Physics,1999,86(6):3068-3075
    [11] 王勖成.有限单元法[M].北京:清华大学出版社,2003 Wang Xucheng.Finite element method[M].Beijing:Tsinghua University Press,2003(in Chinese)
    [12] Basaran C,Lin M H,Li S D.Computational simulation of electromigration induced damage in copper interconnects[C]//Proceedings of the 2007 Summer Computer Simulation Conference.Vista,CA:the Society for Modeling and Simulation International,2007:261-268
    [13] Oates A S,Lin M H.Electromigration failure distributions of Cu/low-k dual-damascene vias:impact of the critical current density and a newreliability extrapolation methodology[J].IEEE Trans Device Mater Reliab,2009,9(2):244-254
    [14] Roy A,Tan C M.Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure[J].Thin Solid Films,2007,515(7/8):3867-3874
    [15] Chen Z H,Lv Z C,Wang X F,et al.Modeling of electromigration of the through silicon via interconnects[C]//11th International Conference on Electronic Packaging Technology & High Density Packaging.New York:Association for Computing Machinery,2010:1221-1225

  • 加载中
计量
  • 文章访问数:  787
  • HTML全文浏览量:  28
  • PDF下载量:  756
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-11-14
  • 网络出版日期:  2014-11-20

目录

    /

    返回文章
    返回
    常见问答