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基于脉冲激光定位的SRAM单粒子闩锁事件率预估

余永涛 韩建伟 封国强 蔡明辉

余永涛, 韩建伟, 封国强, 等 . 基于脉冲激光定位的SRAM单粒子闩锁事件率预估[J]. 北京航空航天大学学报, 2015, 41(4): 609-615. doi: 10.13700/j.bh.1001-5965.2014.0301
引用本文: 余永涛, 韩建伟, 封国强, 等 . 基于脉冲激光定位的SRAM单粒子闩锁事件率预估[J]. 北京航空航天大学学报, 2015, 41(4): 609-615. doi: 10.13700/j.bh.1001-5965.2014.0301
YU Yongtao, HAN Jianwei, FENG Guoqiang, et al. SEL rate prediction for SRAM using pulsed laser sensitivity mapping[J]. Journal of Beijing University of Aeronautics and Astronautics, 2015, 41(4): 609-615. doi: 10.13700/j.bh.1001-5965.2014.0301(in Chinese)
Citation: YU Yongtao, HAN Jianwei, FENG Guoqiang, et al. SEL rate prediction for SRAM using pulsed laser sensitivity mapping[J]. Journal of Beijing University of Aeronautics and Astronautics, 2015, 41(4): 609-615. doi: 10.13700/j.bh.1001-5965.2014.0301(in Chinese)

基于脉冲激光定位的SRAM单粒子闩锁事件率预估

doi: 10.13700/j.bh.1001-5965.2014.0301
基金项目: 中国科学院支撑技术资助项目(110161501038)
详细信息
    作者简介:

    余永涛(1987—),男,河南宝丰人,博士生,yuyongtao10@mails.ucas.ac.cn

    通讯作者:

    韩建伟(1970—),男,河南长葛人,研究员,hanjw@nssc.ac.cn,主要研究方向为航天元器件和材料的空间环境效应研究与应用.

  • 中图分类号: V520.6;TN4

SEL rate prediction for SRAM using pulsed laser sensitivity mapping

  • 摘要: 器件单粒子闩锁效应(SEL)预估方法一般是建立在只有一个敏感体积单元的长方体(RPP)模型上,静态随机存储器(SRAM)单粒子闩锁敏感区的定位试验结果表明敏感体积单元不仅有一个.利用脉冲激光定位SRAM K6R4016V1D单粒子闩锁效应敏感区的试验结果对器件在轨SEL事件率进行了修正计算.首先利用脉冲激光定位SRAM SEL敏感区,获得敏感区的分布情况,并确定整个器件敏感体积单元的数量.然后针对不同的空间轨道、辐射粒子以及敏感体积厚度和敏感体积单元数进行了相应的器件SEL事件率计算,并对计算结果进行了分析讨论.结果表明,重离子引起的SEL事件率随敏感体积单元数量的增大而减小;修正敏感体积单元数量对预估质子引起的SEL事件率非常必要,否则将会过高评估质子直接电离作用对SEL事件率的贡献.

     

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出版历程
  • 收稿日期:  2014-05-27
  • 修回日期:  2014-09-26
  • 网络出版日期:  2015-04-20

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