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130 nm体硅反相器链的单粒子瞬态脉宽特性研究

李赛 陈睿 韩建伟

李赛, 陈睿, 韩建伟等 . 130 nm体硅反相器链的单粒子瞬态脉宽特性研究[J]. 北京航空航天大学学报, 2019, 45(6): 1137-1144. doi: 10.13700/j.bh.1001-5965.2018.0568
引用本文: 李赛, 陈睿, 韩建伟等 . 130 nm体硅反相器链的单粒子瞬态脉宽特性研究[J]. 北京航空航天大学学报, 2019, 45(6): 1137-1144. doi: 10.13700/j.bh.1001-5965.2018.0568
LI Sai, CHEN Rui, HAN Jianweiet al. Single-event-transient pulse width characteristics of 130 nm bulk silicon inverter chain[J]. Journal of Beijing University of Aeronautics and Astronautics, 2019, 45(6): 1137-1144. doi: 10.13700/j.bh.1001-5965.2018.0568(in Chinese)
Citation: LI Sai, CHEN Rui, HAN Jianweiet al. Single-event-transient pulse width characteristics of 130 nm bulk silicon inverter chain[J]. Journal of Beijing University of Aeronautics and Astronautics, 2019, 45(6): 1137-1144. doi: 10.13700/j.bh.1001-5965.2018.0568(in Chinese)

130 nm体硅反相器链的单粒子瞬态脉宽特性研究

doi: 10.13700/j.bh.1001-5965.2018.0568
基金项目: 

国家自然科学基金 11705228

中国科学院科技创新重点部署项目 KGFZD-135-16-005

中国科学院国防科技创新基金 CXJJ16M245

详细信息
    作者简介:

    李赛  女, 博士研究生。主要研究方向:空间辐射效

    陈睿 男, 博士, 副研究员。主要研究方向:空间辐射效应

    韩建伟 男, 博士, 研究员。主要研究方向:空间辐射效应

    通讯作者:

    韩建伟, E-mail: hanjw@nssc.ac.cn

  • 中图分类号: V216.5+1

Single-event-transient pulse width characteristics of 130 nm bulk silicon inverter chain

Funds: 

National Natural Science Foundation of China 11705228

Key Project of Science and Technology Innovation Foundation of Chinese Academy of Sciences KGFZD-135-16-005

National Defense Science and Technology Innovation Fund of Chinese Academy of Sciences CXJJ16M245

More Information
  • 摘要:

    针对130 nm体硅反相器链,利用脉冲激光和重离子实验研究了目标电路单粒子瞬态(SET)的脉宽特性,并分析了电路被辐射诱发的SET脉宽特性受激光能量、重离子线性能量传递(LET)值、PMOS管栅长尺寸等因素的影响机制。重离子和脉冲激光实验结果类似,均表现为随激光能量、LET值的增加,电路被辐射诱发的SET脉宽逐步增大,且表现出明显的双(多)峰分布趋势,但辐射诱发的SET脉冲个数呈先增加再减少规律。此外,实验结果表明,在不同激光能量、LET值下,PMOS管栅长尺寸影响反相器链SET脉冲的特征不同。当激光能量、LET值较低时,PMOS管栅长尺寸大的电路产生的SET脉宽较大,而当激光能量、LET值较大时,PMOS管栅长尺寸小的电路反而产生更宽的SET脉冲。分析表明,较高激光能量、LET辐照时,寄生双极放大效应被触发可能是导致PMOS管栅长尺寸影响电路SET特征差异的主要原因。

     

  • 图 1  SET脉宽测量电路的基本电路

    Figure 1.  Basic circuit of SET pulse width measuring circuit

    图 2  脉冲激光测试系统

    Figure 2.  Test system of pulse laser

    图 3  SET脉宽分布与激光能量的关系

    Figure 3.  Relationship between SET pulse width distribution and laser energy

    图 4  SET脉宽分布与LET值的关系

    Figure 4.  Relationship between SET pulse width distribution and LET

    图 5  反相器链产生的SET脉冲个数与激光能量、LET值的关系

    Figure 5.  Relationship between number of SET pulse generated by inverter chain and laser energy/LET

    图 6  反相器链产生的SET脉冲的平均脉宽与激光能量、LET值的关系

    Figure 6.  Relationship between average pulse width of SET pulse generated by inverter chain and laser energy/LET

    图 7  双阱工艺下CMOS电路中寄生双极晶体管结构

    Figure 7.  Structure of parasitic bipolar transistor in CMOS circuit in double well process

    表  1  重离子参数

    Table  1.   Heavy ion parameters

    离子种类 能量/MeV LET值/(MeV·cm2·mg-1) 射程/μm
    Fe 6.3 29.2 20
    Xe 1 994.1 49.65 150.44
    1 209.5 66 87.88
    Bi 1 283.3 97.8 69.8
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出版历程
  • 收稿日期:  2018-09-28
  • 录用日期:  2018-11-30
  • 网络出版日期:  2019-06-20

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