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�������պ����ѧѧ�� 2000, Vol. 26 Issue (4) :485-489    DOI:
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Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films
CHEN Chen, HE Yu-liang, QI Xiang-lin*
Beijing University of Aeronautics and Astronautics,School of Science

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ժҪ �о��˲��׶����׹象Ĥ΢�ṹ�͵�ѧ���Ե�Ӱ��.ָ�����������ʹnc-Si:HĤ����ԭ��Ũ�ȴﵽԭ�ӷ���5%��ˮƽ,����Ч�ʿɴ�η≈1.0%.���׺���ʹ��Ĥ���絼���������������,�ﵽσ=10-1~101S·cm-1,�絼������ΔE=(1~6)×10-2eVˮƽ.�����ܴ�ʹnc-Si:HĤ���������Ҿ����ߴ��С,��������ʹ���׹象Ĥ��Ӧ�÷���չ.
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Abstract�� A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc-Si:H) indicate that the room temperature dark conductivity σ is in the range of 10-1-101S·cm-1,two magnitudes higher than that of undoped nc-Si:H films. We also found the relationship between doping concentration Np and σ, that is strikingly similar to the pc-Si films. The conductivity activation energy ΔE of P-doped nc-Si:H is (1-3)×10-2eV, lower than the undoped nc-Si:H films. Otherwise, we investigated the piezo-resistance effect of P doped samples. Compared with undoped nc-Si:H samples, the piezo-resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.
Keywords�� silicon films   electrical conductivity   effects   nanocrystalline silicon films   piezo-resistance     
Received 1999-01-20;


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�³�, ������, ������.�������׹象Ĥ�絼��ѹ��ЧӦ���о�[J]  �������պ����ѧѧ��, 2000,V26(4): 485-489
CHEN Chen, HE Yu-liang, QI Xiang-lin.Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films[J]  JOURNAL OF BEIJING UNIVERSITY OF AERONAUTICS AND A, 2000,V26(4): 485-489
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