Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films
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摘要: 研究了掺磷对纳米硅薄膜微结构和电学特性的影响.指出气相掺杂能使nc-Si:H膜中磷原子浓度达到原子分数5%的水平,掺杂效率可达η≈1.0%.掺磷后能使薄膜暗电导率提高两个数量级,达到σ=10-1~101S·cm-1,电导激活能ΔE=(1~6)×10-2eV水平.掺磷能促使nc-Si:H膜更加有序化且晶粒尺寸变小,这有利于使纳米硅薄膜往应用方向发展.Abstract: A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc-Si:H) indicate that the room temperature dark conductivity σ is in the range of 10-1-101S·cm-1,two magnitudes higher than that of undoped nc-Si:H films. We also found the relationship between doping concentration Np and σ, that is strikingly similar to the pc-Si films. The conductivity activation energy ΔE of P-doped nc-Si:H is (1-3)×10-2eV, lower than the undoped nc-Si:H films. Otherwise, we investigated the piezo-resistance effect of P doped samples. Compared with undoped nc-Si:H samples, the piezo-resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.
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Key words:
- silicon films /
- electrical conductivity /
- effects /
- nanocrystalline silicon films /
- piezo-resistance
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