A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc-Si:H) indicate that the room temperature dark conductivity σ is in the range of 10-1-101S·cm-1,two magnitudes higher than that of undoped nc-Si:H films. We also found the relationship between doping concentration Np and σ, that is strikingly similar to the pc-Si films. The conductivity activation energy ΔE of P-doped nc-Si:H is (1-3)×10-2eV, lower than the undoped nc-Si:H films. Otherwise, we investigated the piezo-resistance effect of P doped samples. Compared with undoped nc-Si:H samples, the piezo-resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.
CHEN Chen, HE Yu-liang, QI Xiang-lin.Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films[J] JOURNAL OF BEIJING UNIVERSITY OF AERONAUTICS AND A, 2000,V26(4): 485-489