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电离辐射对部分耗尽SOI器件关态电流的影响

恩云飞 刘远 何玉娟

恩云飞, 刘远, 何玉娟等 . 电离辐射对部分耗尽SOI器件关态电流的影响[J]. 北京航空航天大学学报, 2013, 39(5): 683-687.
引用本文: 恩云飞, 刘远, 何玉娟等 . 电离辐射对部分耗尽SOI器件关态电流的影响[J]. 北京航空航天大学学报, 2013, 39(5): 683-687.
En Yunfei, Liu Yuan, He Yujuanet al. Total dose dependence of off currents in the irradiated PD-SOI devices[J]. Journal of Beijing University of Aeronautics and Astronautics, 2013, 39(5): 683-687. (in Chinese)
Citation: En Yunfei, Liu Yuan, He Yujuanet al. Total dose dependence of off currents in the irradiated PD-SOI devices[J]. Journal of Beijing University of Aeronautics and Astronautics, 2013, 39(5): 683-687. (in Chinese)

电离辐射对部分耗尽SOI器件关态电流的影响

基金项目: 国家自然科学基金资助项目(61204112); 中国博士后科学基金资助项目(2012M521628)
详细信息
  • 中图分类号: TN386

Total dose dependence of off currents in the irradiated PD-SOI devices

  • 摘要: 针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insulator)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结构器件中,辐射诱生场氧化层固定电荷将使得器件侧壁泄漏电流增加,器件前、背栅关态电流随总剂量变化明显;在环栅结构器件中,辐射诱使背栅晶体管开启将使得前栅器件关态电流变大,而带-带隧穿与背栅泄漏电流的耦合效应将使得器件关态电流随前栅电压减小而迅速增加.基于以上结果,可通过改良版图结构以提高SOI器件的抗总剂量电离辐射能力.

     

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出版历程
  • 收稿日期:  2013-01-17
  • 修回日期:  2013-05-07
  • 网络出版日期:  2013-05-31

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