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MOCVD法制备一维氧化物阵列材料

张跃 袁洪涛 程进 宋强

张跃, 袁洪涛, 程进, 等 . MOCVD法制备一维氧化物阵列材料[J]. 北京航空航天大学学报, 2004, 30(10): 939-943.
引用本文: 张跃, 袁洪涛, 程进, 等 . MOCVD法制备一维氧化物阵列材料[J]. 北京航空航天大学学报, 2004, 30(10): 939-943.
Zhang Yue, Yuan Hongtao, Cheng Jin, et al. Array materials of one-dimensional oxides prepared by MOCVD method[J]. Journal of Beijing University of Aeronautics and Astronautics, 2004, 30(10): 939-943. (in Chinese)
Citation: Zhang Yue, Yuan Hongtao, Cheng Jin, et al. Array materials of one-dimensional oxides prepared by MOCVD method[J]. Journal of Beijing University of Aeronautics and Astronautics, 2004, 30(10): 939-943. (in Chinese)

MOCVD法制备一维氧化物阵列材料

基金项目: 国家自然科学基金资助项目(50172002)
详细信息
  • 中图分类号: TB 34

Array materials of one-dimensional oxides prepared by MOCVD method

  • 摘要: 介绍了一种新型的大气开放式金属有机物化学气相沉积(MOCVD)系统的结构及其新特点;以ZnO纳米棒阵列材料的制备为例,说明了大气开放式MOCVD法制备氧化物阵列材料的方法,并对氧化物阵列材料的制备过程进行了论述;扫描电镜研究发现这些取向生长的氧化物一维材料均垂直于基片沿某一方向生长,并且排列非常规整,具有无晶界、晶体缺陷少、体表面积小和具有特殊的尖端等特点;介绍了制备VOx,FeOx,TiO2等一元金属氧化物和ZnAlO,ZnMgO等多元掺杂金属氧化物的一维阵列材料的方法.

     

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出版历程
  • 收稿日期:  2004-04-28
  • 网络出版日期:  2004-10-31

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