[an error occurred while processing this directive]
   
 
���¿��ټ��� �߼�����
   ��ҳ  �ڿ�����  ��ί��  Ͷ��ָ��  �ڿ�����  ��������  �� �� ��  ��ϵ����
�������պ����ѧѧ�� 2003, Vol. 29 Issue (9) :753-758    DOI:
���� ����Ŀ¼ | ����Ŀ¼ | ������� | �߼����� << | >>
����nc-Si:H��Ĥ�����׹辧������������
Τ����1, ������1, �Ŵ���2, �����3*
1. �������պ����ѧ ��ѧԺ, ���� 100083;
2. �������պ����ѧ �ѧԺ, ���� 100083;
3. �й���ѧԺ?�뵼���о���, ���� 100080
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
Wei Wensheng1, Wang Tianmin1, Zhang Chunxi2, Li Guohua3*
1. School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China;
2. School of Astronautics, Beijing University of Aeronautics and Astronautics, Beijing 100083, China;
3. Institute of Semiconductor, Chinese Academy of Science, Beijing 100080, China

ժҪ
�����
�������
Download: PDF (0KB)   HTML 1KB   Export: BibTeX or EndNote (RIS)      Supporting Info
ժҪ ����PECVD������ϵ�в����⻯���׹�(nc-Si:H)��Ĥ�����׹辧��(nc-Si)����������������.��Raman��XRD��AFM��HRTEM�ȷ����о���΢�۽ṹʱ����:���׵�nc-Si:H��ĤXRD ��λ�Ķ��������ԼΪ33°.����nc-Si:H��Ĥ��XRD��λ�Ķ��������ԼΪ47°.���������ܶ���������Ĺ�ϵ���ʵ����������õ�:�ϸߵijĵ��¶�����������ı�,ʹ����nc-Si:H��Ĥ��nc-Si�ľ�����������.�ʵ��ĵ糡��������������ı�,���²���nc-Si:H��Ĥ��һ�����������ܶȷ�Χ��nc-Si�ľ�����������.
Service
�ѱ����Ƽ�������
�����ҵ����
�������ù�����
Email Alert
RSS
�����������
�ؼ����� ����   �糡   �¶�   ��������   nc-Si:H��Ĥ   ���׹辧��     
Abstract�� The preferred growth of nanosized crystal silicon (nc-Si) in doped hydrogenated nanocrystalline silicon (nc-Si:H) films which were prepared using plasma enhanced chemical vapor deposition (PECVD) system by RF(13.56?MHz) and DC bias stimulating was found. Its microstructure was investigated using X-ray diffraction (XRD), Raman spectrum meter, atomic force microscope (AFM) and high resolution transmission electronic microscope (HRTEM). Nc-Si about 10 nm was distributed in the silicon-hydrogen amorphous networks in the films. The peaks of XRD spectra of phosphorus doped nc-Si:H films was at 2��θ��≈33°, the exponent of crystalline plane was (130). The peaks of XRD spectra of boron doped nc-Si:H films was at 2��θ��≈47°, the exponent of crystalline plane was (220), respectively. The considerable reasons were investigated. The relation between size of nc-Si, crystalline volume fraction and depositing parameters were studied.
Keywords�� doped   electric field   temperature   perferred growth   hydrogenated nanocrystalline silicon film   nanosized crystal silicon     
Received 2002-07-16;
Fund:

863�ƻ�������Ŀ; ��У��ʿ�����������Ŀ(200220006037)

About author: Τ����(1966-),��,����ƽ����,��ʿ��, weiwensheng287@sohu.com.
���ñ���:   
Τ����, ������, �Ŵ���, �����.����nc-Si:H��Ĥ�����׹辧������������[J]  �������պ����ѧѧ��, 2003,V29(9): 753-758
Wei Wensheng, Wang Tianmin, Zhang Chunxi, Li Guohua.Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film[J]  JOURNAL OF BEIJING UNIVERSITY OF AERONAUTICS AND A, 2003,V29(9): 753-758
���ӱ���:  
http://bhxb.buaa.edu.cn//CN/     ��     http://bhxb.buaa.edu.cn//CN/Y2003/V29/I9/753
Copyright 2010 by �������պ����ѧѧ��