北京航空航天大学学报 ›› 2010, Vol. 36 ›› Issue (12): 1440-1443.

• 论文 • 上一篇    下一篇

太赫兹肖特基二极管混频性能分析

樊国丽, 江月松   

  1. 北京航空航天大学 电子信息工程学院, 北京 100191
  • 收稿日期:2009-11-06 出版日期:2010-12-30 发布日期:2010-12-30
  • 作者简介:樊国丽(1979-),女,山西夏县人,博士生,glfan@ee.buaa.edu.cn.
  • 基金资助:

    总装武器装备探索研究项目(#7130730)

Schottky diodes mixing performance evaluation in terahertz band

Fan Guoli, Jiang Yuesong   

  1. School of Electronics and Information Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China
  • Received:2009-11-06 Online:2010-12-30 Published:2010-12-30

摘要: 工作在太赫兹波段的肖特基混频二极管的混频性能会受到高频效应的影响而降低.将有限差分算法引入二极管内部电磁场的计算中,并从结电容并联效应、趋肤效应、等离子共振、速率饱和效应四个方面分析了高频效应对二极管混频性能的影响,并以截止频率作为品质因数,对二极管结构参数进行优化设计.仿真实验结果表明:随着频率的提高,减小阳极直径、减小外延层厚度和提高外延层掺杂浓度能减小高频效应的影响,提高太赫兹二极管的混频性能.

Abstract: Schottky diodes mixing performance can decrease as high-frequency effects in terahertz band. The finite difference technique was used to calculate the electromagnetic field within the diode chip and the influence of high-frequency effects on mixing performance was analyzed from the shunting of the junction capacitance, the skin effect, the plasma resonance effect and velocity saturation effect, respectively. Finally, the structure parameters were optimized when the cut-off frequency as the figure of merit. Simulation results show that diode mixing performance can be improved by reducing the anode diameter and the epilayer thickness, and increasing the epilayer doping density, and will benefit the development of the high frequency mixing diodes.

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