太赫兹肖特基二极管混频性能分析

樊国丽; 江月松

太赫兹肖特基二极管混频性能分析

北京航空航天大学电子信息工程学院, 北京 100191

基金项目: 总装武器装备探索研究项目(#7130730)

详细信息

作者简介:
樊国丽(1979-),女,山西夏县人,博士生,glfan@ee.buaa.edu.cn.

中图分类号: TN 36
计量
- 文章访问数: 3315
- HTML全文浏览量: 38
- PDF下载量: 1531
- 被引次数: 0
出版历程
- 收稿日期: 2009-11-06
- 网络出版日期: 2010-12-30

Schottky diodes mixing performance evaluation in terahertz band

School of Electronics and Information Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

摘要

摘要: 工作在太赫兹波段的肖特基混频二极管的混频性能会受到高频效应的影响而降低.将有限差分算法引入二极管内部电磁场的计算中,并从结电容并联效应、趋肤效应、等离子共振、速率饱和效应四个方面分析了高频效应对二极管混频性能的影响,并以截止频率作为品质因数,对二极管结构参数进行优化设计.仿真实验结果表明:随着频率的提高,减小阳极直径、减小外延层厚度和提高外延层掺杂浓度能减小高频效应的影响,提高太赫兹二极管的混频性能.
- 太赫兹波 /
- 肖特基势垒二极管 /
- 高频效应 /
- 有限差分方法
Abstract: Schottky diodes mixing performance can decrease as high-frequency effects in terahertz band. The finite difference technique was used to calculate the electromagnetic field within the diode chip and the influence of high-frequency effects on mixing performance was analyzed from the shunting of the junction capacitance, the skin effect, the plasma resonance effect and velocity saturation effect, respectively. Finally, the structure parameters were optimized when the cut-off frequency as the figure of merit. Simulation results show that diode mixing performance can be improved by reducing the anode diameter and the epilayer thickness, and increasing the epilayer doping density, and will benefit the development of the high frequency mixing diodes.
- terahertz wave /
- Schottky barrier diodes /
- high-frequency effect /
- finite difference methode

HTML全文

参考文献(1)

[1] Gulkis S,Allen M,Backus C,et al.Remote sensing of a comet at millimeter and submillimeter wavelengths from an orbiting spacecraft[J].Planetary and Space Science.2007,55(9): 1050-1057 [2] Jacobs E,Moyer S,Franck C,et al.Concealed weapon identification using terahertz imaging sensors // Terahertz for Military and Security Applications Iv 2006.Orlando (Kissimmee),FL,USA: SPIE,2006:6210J-62110 [3] Hubers H W.Terahertz heterodyne receivers[J].IEEE Journal of Selected Topics in Quantum Electronics,2008,12(2): 378-391 [4] Crowe T W,Mattauch R J,Roser H P,et al.GaAs Schottky diodes for THz mixing applications // Proceeding of the IEEE. :Institute of Electrical and Electronics Engineers,Inc,1992:1827-1814 [5] Siles J V,Grajal J,Krozer V,et al.Schottky diode-based mixers design and optimization at millimetre and submillimetre-wave bands // Microwave Conference.Madrid,Spain:ETSI Telecomunication,2005:1753-1756 [6] Dickens L E.Spreading resistance as a function of frequency[J].Microwave Theory and Techniques,IEEE Transactions on,1967,15(2): 101-109 [7] Bozhkov V G.Semiconductor detectors,mixers,and frequency multipliers for the terahertz band[J].Radiophysics and Quantum Electronics,2003,46(8):631-656 [8] William C B,Peatman T W C.Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise terahertz receiver applications //Cornell Conference on Advanced Concepts in.Ithaca,NY,USA:IEEE,1989: 390-398 [9] Cojocari O,Sydlo C,Hartnagel H,et al.Schottky-structures for THz-applications based on quasi-vertical design-concept // 16th International Symposium on Space Terahertz Technology.Gteborg,Sweden:ISSTT,2005:490-495

施引文献

资源附件(0)

访问统计