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�������պ����ѧѧ�� 2011, Vol. 37 Issue (9) :1100-1104    DOI:
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ESD damage simulation of integrated circuits by the consideration on parasitic parameters
Lü Weimin, Hu Dong, Ma Jinghua, Xie Jinsong*
School of Reliability and Systems Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

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ժҪ �ڴ�ͳ�Ļ�����Ƶ�·��ESD (Electro-Static Discharge)���˷�����,ͨ�������ǰ�ͼ����ṹ��Ӱ��,�������������ʵ������������ֽϴ�ƫ��,��������һ�ֿ��ǰ�ͼ����м��������ļ��ɵ�·ESD���˵ķ��淽��.���ȸ����˷���Ӧ�õľ����������.Ȼ���վ��鹫ʽ��ȡ����ȷ�˸��ּ��������ļ���ģ��.���,�Լ�������Ŵ���LM741Ϊ��,���������ESD����ģ��,��ͨ������ʵ�顢ʧЧ��λ������ܲ���,�������:������ʵ�������нϺõ�һ����,��֤�˸÷�������Ч��.
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Abstract�� In the traditional electro-static discharge (ESD) damage simulation based on logic circuit, the influence of layout was not taken into account as usual, and there was larger deviation between the results of simulation and the actual damage, so a new simulation method of ESD damage for integrated circuits was presented by the consideration for parasitic parameters extraction in layout. Firstly the specific simulation process in the application was given. Then the models of kinds of parasitic were defined according to empirical parameter extraction method. Lastly the ESD damage simulation for integrated operational amplifier LM741 as case study was carried out. According to zap test, failure location and electrical performance testing, the results showed have much consistency in simulation and experiment, and the validity of the simulation method is finally verified.
Keywords�� ESD damage   layout   parasitic parameter   circuit simulation   design for reliability     
Received 2010-09-27;


About author: ������(1970-),��,ɽ����̨��,��ʿ��,lwm_yt@sina.com.
������, ����, ����, л����.���Ǽ��������ļ��ɵ�·ESD���˷��淽��[J]  �������պ����ѧѧ��, 2011,V37(9): 1100-1104
L�� Weimin, Hu Dong, Ma Jinghua, Xie Jinsong.ESD damage simulation of integrated circuits by the consideration on parasitic parameters[J]  JOURNAL OF BEIJING UNIVERSITY OF AERONAUTICS AND A, 2011,V37(9): 1100-1104
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