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AZ91D镁合金低压交流氧化成膜机制

李文 李卫平 刘慧丛 朱立群

李文, 李卫平, 刘慧丛, 等 . AZ91D镁合金低压交流氧化成膜机制[J]. 北京航空航天大学学报, 2011, 37(9): 1186-1190.
引用本文: 李文, 李卫平, 刘慧丛, 等 . AZ91D镁合金低压交流氧化成膜机制[J]. 北京航空航天大学学报, 2011, 37(9): 1186-1190.
Li Wen, Li Weiping, Liu Huicong, et al. Mechanism of anodizing oxidation film of AZ91D magnesium alloy at low AC voltage[J]. Journal of Beijing University of Aeronautics and Astronautics, 2011, 37(9): 1186-1190. (in Chinese)
Citation: Li Wen, Li Weiping, Liu Huicong, et al. Mechanism of anodizing oxidation film of AZ91D magnesium alloy at low AC voltage[J]. Journal of Beijing University of Aeronautics and Astronautics, 2011, 37(9): 1186-1190. (in Chinese)

AZ91D镁合金低压交流氧化成膜机制

基金项目: 航空科学基金资助项目(2008ZE51064)
详细信息
  • 中图分类号: TG 174

Mechanism of anodizing oxidation film of AZ91D magnesium alloy at low AC voltage

  • 摘要: 基于一种低的交流电压条件(10 V),在NaOH和Na2SiO3的混合溶液体系中,对AZ91D镁合金进行电化学阳极氧化处理.利用扫描电镜(SEM)、X射线能谱仪(EDS)、X射线衍射仪(XRD)、电化学测试技术等手段研究了AZ91D镁合金表面阳极氧化的成膜过程、膜层生长的特点以及氧化工艺参数对膜层性能的影响规律.试验结果表明:在10 V这样低的交流电压下,在镁合金表面获得的氧化膜层表面均匀,为无孔洞的平层状膜层,其生长过程呈叠加式特点;获得的氧化膜层的主要成分为Mg2SiO4;在质量分数为3.5%的NaCl溶液中,经过电化学阳极氧化的镁合金的耐蚀性优于未经处理的镁合金.

     

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出版历程
  • 收稿日期:  2010-05-13
  • 网络出版日期:  2011-09-30

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