北京航空航天大学学报 ›› 2012, Vol. 38 ›› Issue (8): 1080-1084.

• 论文 • 上一篇    下一篇

忆阻器的电路实现及其混沌动力学研究

王晓媛1, 齐维贵1, 王兴元2   

  1. 1. 哈尔滨工业大学 电气工程及自动化学院,哈尔滨 150001;
    2. 大连理工大学 电子信息与电气工程学部,大连 116024
  • 收稿日期:2012-01-13 出版日期:2012-08-30 发布日期:2012-09-05

Novel circuit of memristor and its chaotic dynamics characteristics

Wang Xiaoyuan1, Qi Weigui1, Wang Xingyuan2   

  1. 1. School of Electrical Engineering and Automation,Harbin Institute of Technology, Harbin 150001, China;
    2. Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
  • Received:2012-01-13 Online:2012-08-30 Published:2012-09-05

摘要: 提出一种新的忆阻器电路实现方法。该方法从忆阻器的定义出发,构造出忆阻器内部的基本变量磁通,利用光控电阻实现了磁通量对光电池的隔离控制,最终实现了一个可以独立作为二端口器件工作于电路及仿真中的忆阻器电路。给出了其电路实验结果,并将符合该忆阻器特性的数学模型用于蔡氏电路中替代其中的非线性二极管,研究此状况下产生混沌现象的可行性,为HP忆阻器今后应用于混沌电路提供可行性依据.

Abstract: A new method of memristor circuit implement was presented. This way is based on the definition of flux-control memristor, firstly, the flux was constructed, and then using the flux to control the memductance which was embodied by the photocell of the light dependent resistor (LDR). Finally, an analog model of memristor which can be used as a two terminal element in both simulations and experiments for future research on memristor applications was implemented. The experimental results are shown, and the mathematical model of the LDR memristor was used to instead of the nonlinear diode in Chua-s circuit, in order to study the chaotic characteristic of such a LDR memristor based Chua-s circuit, which will show the feasibility for using a HP memristor to get a chaotic circuit.

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