北京航空航天大学学报 ›› 2013, Vol. 39 ›› Issue (4): 531-534.

• 论文 • 上一篇    下一篇

基于衬底偏置的超低耗电流复用混频器

申晶, 张晓林   

  1. 北京航空航天大学 电子信息工程学院, 北京 100191
  • 收稿日期:2012-04-19 出版日期:2013-04-30 发布日期:2013-05-03
  • 基金资助:
    国防科工委民用航天专项资助项目; 北京市重点学科基金资助项目(XK100070525)

Ultra-low power bulk-biased mixer with current-reuse

Shen Jing, Zhang Xiaolin   

  1. School of Electronic and Information Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China
  • Received:2012-04-19 Online:2013-04-30 Published:2013-05-03

摘要: 基于SMIC 0. 18μm 1P6M CMOS工艺,设计实现了一种工作在0.6V超低电源电压下的混频器.该混频器跨导级采用自偏置的互补跨导结构,并与开关级构成折叠结构,大大降低了电源电压;电路中所有的MOS管衬底均加有固定偏置电压,减小了MOS管的阈值电压,实现了超低电压超低功耗的设计;并采用电流复用技术,改善了电路的噪声性能,并提高了其转换增益和线性度.该混频器核心电路尺寸为460μm×400μm,当射频信号、本振信号和中频信号分别为1575MHz,1400MHz和175MHz时,仿真表明,该混频器转换增益(Gc)为6.1dB,双边带噪声系数为14dB,输入1dB压缩点为-16.67dBm,在0.6V的电源电压条件下,功耗仅为0.76mW,可用于航空航天领域的电子系统中.

Abstract: Using the approaches of folded switching stage and self-biased transconductance stage, a mixer operating at supply voltage down to 0.6V was designed. The bulk-biased topology was used to achieve ultra-low supply voltage and ultra-low power consumption while the current-reuse technique was selected to increase gain, linearity and noise performance. Implemented in a SMIC 0.18μm CMOS process, the mixer core has an area of 460μm×400μm. When the frequency of the radio frequency (RF) signal, local oscillator (LO) signal and the intermediate frequency (IF) signal are 1575MHz, 1400MHz and 175MHz, respectively,the simulation results show that the mixer features a conversion gain of 6.1dB, a dual sideband (DSB) noise figure of 14dB, a 1dB compression point of -16.67dBm, and consumes only 0.76mW.

中图分类号: 


版权所有 © 《北京航空航天大学学报》编辑部
通讯地址:北京市海淀区学院路37号 北京航空航天大学学报编辑部 邮编:100191 E-mail:jbuaa@buaa.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发