[1] OVSHINSKY S R.Reversible electrical switching phenomena in disordered structures[J].Physical Review Letters,1968,21(20):1450-1453.
[2] RAOUX S,WELNIC W,IELMINI D.Phase change materials and their application to nonvolatile memories[J].Chemical Reviews,2010,110(1):240-267.
[3] WONG H S P,SALAHUDDIN S.Memory leads the way to better computing[J].Nature Nanotechnology,2015,10(3):191-194.
[4] LENCER D,SALINGA M,GRABOWSKI B,et al.A map for phase-change materials[J].Nature Materials,2008,7(12):972-977.
[5] LENCER D,SALINGA M,WUTTIG M.Design rules for phase-change materials in data storage applications[J].Advanced Materials,2011,23(18):2030-2058.
[6] RAOUX S.Phase change materials[J].Annual Review of Materials Research,2009,39(1):25-48.
[7] PERNIOLA L,SOUSA V,FANTINI A,et al.Electrical behavior of phase-change memory cells based on GeTe[J].IEEE Electron Device Letters,2010,31(5):488-490.
[8] BRUNS G,MERKELBACH P,SCHLOCKERMANN C,et al.Nanosecond switching in GeTe phase change memory cells[J].Applied Physics Letters,2009,95(4):043108.
[9] CHONG T,SHI L,ZHAO R,et al.Phase change random access memory cell with superlattice-like structure[J].Applied Physics Letters,2006,88(12):122114.
[10] VINOD E M,SINGH A K,GANESAN R,et al.Effect of selenium addition on the GeTe phase change memory alloys[J].Journal of Alloys and Compounds,2012,537(19):127-132.
[11] VINOD E M,SANGUNNI K S.The effect of Se doping on spectroscopic and electrical properties of GeTe[J].Thin Solid Films,2014,550(1):569-574.
[12] KOLOBOV A V,TOMINAGA J,FONS P,et al.Local structure of crystallized GeTe films[J].Applied Physics Letters,2003,82(3):382-384.
[13] TONG F,MIAO X S,WU Y,et al.Effective method to identify the vacancies in crystalline GeTe[J].Applied Physics Letters,2010,97(26):261904.
[14] VINOD E M,RAMESH K,SANGUNNI K S.Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys[J].Scientific Reports,2015,5:8050.
[15] WANG M,LU Y,SHEN X,et al.Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5[J].CrystEngComm,2015,17(26):4871-4876.
[16] HAFNER J.Ab-initio simulations of materials using VASP:Density-functional theory and beyond[J].Journal of Computational Chemistry,2008,29(13):2044-2078.
[17] BLÖCHL P E.Projector augmented-wave method[J].Physical Review B,1994,50(24):17953-17979.
[18] PERDEW J P,WANG Y.Pair-distribution function and its coupling-constant average for the spin-polarized electron gas[J].Physical Review B,1992,46(20):12947-12954.
[19] MIAO N,SA B,ZHOU J,et al.Investigation on Ge5-xSbxTe5 phase-change materials by first-principles method[J].Applied Physics A,2010,99(4):961-964.
[20] GOLDAK J,BARRETT C S,INNES D,et al.Structure of alpha GeTe[J].The Journal of Chemical Physics,1966,44(9):3323-3325.
[21] LEVIN E M,BESSER M F,HANUS R.Electronic and thermal transport in GeTe:A versatile base for thermoelectric materials[J].Journal of Applied Physics,2013,114(8):083713.
[22] CHATTOPADHYAY T,BOUCHERLE J.Neutron diffraction study on the structural phase transition in GeTe[J].Journal of Physics C:Solid State Physics,1987,20(10):1431.
[23] PEIERLS R E.Quantum theory of solids[M].Oxford:Oxford University Press,1955.
[24] SUN Z,TIAN S,SA B.Investigation of the structure and properties of rhombohedral Cu-Ge-Te alloys by ab initio calculations[J].Intermetallics,2013,32(2):292-296.
[25] ZHANG S,WEI S H,ZUNGER A,et al.Defect physics of the CuInSe2 chalcopyrite semiconductor[J].Physical Review B,1998,57(16):9642.
[26] WEI S H.Overcoming the doping bottleneck in semiconductors[J].Computational Materials Science,2004,30(3):337-348.
[27] NAM S W,CHUNG H S,LO Y C,et al.Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires[J].Science,2012,336(6088):1561-1566.
[28] NUKALA P,AGARWAL R,QIAN X,et al.Direct observation of metal-insulator transition in single-crystalline germanium telluride nanowire memory devices prior to amorphization[J].Nano Letters,2014,14(4):2201-2209.
[29] SUN Z,ZHOU J,BLOMQVIST A,et al.Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy[J].Physical Review Letters,2009,102:075504.
[30] UPADHYAY M,ABHAYA S,MURUGAVEL S,et al.Experimental evidence for presence of voids in phase change memory material[J].RSC Advances,2014,4(8):3659-3668. |