北京航空航天大学学报 ›› 2019, Vol. 45 ›› Issue (11): 2193-2198.doi: 10.13700/j.bh.1001-5965.2019.0076

• 论文 • 上一篇    下一篇

0.13 μm部分耗尽SOI工艺反相器链SET脉宽传播

上官士鹏1,2, 朱翔1,2, 陈睿1, 马英起1, 李赛1,2, 韩建伟1   

  1. 1. 中国科学院 国家空间科学中心, 北京 100190;
    2. 中国科学院大学, 北京 100049
  • 收稿日期:2019-03-01 出版日期:2019-11-20 发布日期:2019-11-30
  • 通讯作者: 上官士鹏.E-mail:shangguansp@nssc.ac.cn E-mail:shangguansp@nssc.ac.cn
  • 作者简介:上官士鹏 男,博士,助理研究员。主要研究方向:半导体器件空间环境效应;朱翔 男,博士,助理研究员。主要研究方向:半导体器件空间环境效应;陈睿 男,博士,副研究员。主要研究方向:半导体器件空间环境效应;马英起 男,博士,副研究员。主要研究方向:半导体器件空间环境效应;李赛 女,博士研究生。主要研究方向:半导体器件空间环境效应;韩建伟 男,博士,研究员。主要研究方向:核物理。
  • 基金资助:
    国家自然科学基金(11875060);中国科学院重点部署项目(61501050302A)

Single event transient pulse width transmission of 0.13 μm partial depleted SOI process DFF

SHANGGUAN Shipeng1,2, ZHU Xiang1,2, CHEN Rui1, MA Yingqi1, LI Sai1,2, HAN Jianwei1   

  1. 1. National Space Science Centre, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-03-01 Online:2019-11-20 Published:2019-11-30
  • Supported by:
    National Natural Science Foundation of China (11875060); Key Research Program of the Chinese Academy of Sciences (61501050302A)

摘要: 基于0.13 μm部分耗尽绝缘体上硅(PD-SOI)工艺,设计了一款片上反相器链(DFF)单粒子瞬态(SET)脉宽测试电路并流片实现,SET脉宽测试范围为105~3 150 ps,精度为±52.5 ps。利用重离子加速器和脉冲激光模拟单粒子效应试验装置对器件进行了SET脉宽试验。采用线性能量传输(LET值)为37.6 MeV·cm2/mg的86Kr离子触发了反相器链的三级脉宽传播,利用脉冲激光正面测试器件触发了相同级数的脉宽,同时,激光能量值为5 500 pJ时触发了反相器链的双极放大效应,脉宽展宽32.4%。通过对比激光与重离子的试验结果,以及明确激光到达有源区的有效能量的影响因子,建立了激光有效能量与重离子LET值的对应关系,分析了两者对应关系偏差的原因。研究结果可为其他种类芯片单粒子效应试验建立激光有效能量与重离子LET值的对应关系提供参考。

关键词: 部分耗尽绝缘体上硅(PD-SOI), 重离子加速器, 脉冲激光, 有效能量, 脉冲宽度, 双极放大

Abstract: Based on 0.13 μm partial depleted silicon-on-insulator (PD-SOI) process, a delay flip-flop (DFF) has been designed for single event transient (SET) pulse width, with the pulse width test range between 105 ps to 3 150 ps and the precision being ±52.5 ps. The DFF has been tested by heavy ion accelerator and pulsed laser single event effect facility. 86Kr ion with linear energy transfer (LET) equal 37.6 MeV·cm2/mg was chosen to obtain a DFF 3 level SET pulse width, and pulsed laser triggered the same pulse width by front-side testing. By using 5 500 pJ laser energy, the bipolar amplification of DFF has been triggered, and the pulse width is amplified by 32.3%. According to the same SET pulse width, a method for estimating the pulsed laser energy reaching to the active area of chips which is also called effective energy is established. Meanwhile, based on the experimental results, the relationship between effective energy and LET was also established, and the deviations between the two methods were also analyzed. Other kinds of chips can also use this method to establish the relationship between laser energy and LET.

Key words: partial depleted silicon-on-insulator (PD-SOI), heavy ion accelerator, pulsed laser, effective energy, pulse width, bipolar amplification

中图分类号: 


版权所有 © 《北京航空航天大学学报》编辑部
通讯地址:北京市海淀区学院路37号 北京航空航天大学学报编辑部 邮编:100191 E-mail:jbuaa@buaa.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发