Mechanism of voltage spike production during switching transients and its suppression methods in Boost converter
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摘要:
Boost变换器常用作两级式逆变器的前级升压电路，由于电路中寄生参数的存在，开关瞬间输出电压叠加有瞬态尖峰，降低了波形质量，甚至影响逆变器的正常工作。为了抑制直流环节电压尖峰，研究了Boost电路开关瞬态过程，针对瞬态电路开关特性和开关器件工作状态，建立了基于金属氧化物半导体场效应晶体管（MOSFET）和肖特基二极管（SBD）的换流单元的解析模型，进一步分析了不同寄生参数对开关瞬态电流特性的影响，以及导致电压尖峰的机理等。仿真分析了寄生参数与输出电压尖峰大小的关系，提出了“减缓开关速度”和“降低输出端寄生电感”2种从源头抑制输出电压尖峰的方法。仿真和实验表明，这2种抑制方法能够有效减小电压尖峰，提高Boost电路的输出电压性能。
Abstract:Boost converter is often used as the pre-stage circuit in double-stage inverter. Because of the existence of parasitic parameters in the circuit, the output voltage will be superimposed with transient spikes, which reduces the waveform quality and even affects the operation of inverter. In order to suppress the voltage spikes, the switching transient of Boost converter is studied. Aimed at the switching characteristics of transient circuit and the operation status of switching devices, an analytical model of commutation unit based on metal-oxide-semiconductor field-effect transistor (MOSFET) and Schottky barrier diode (SBD) is established, and the influence of parasitic parameters on the current characteristics during switching transient, as well as the mechanism of causing voltage spikes, is analyzed. The relationships between the parasitic parameters and the output voltage spikes are analyzed and compared by simulation, and two methods are proposed to suppress the output voltage spikes, which are "slowing down the switching speed" and "reducing the output terminal parasitic inductance". The validity of these two methods to reduce voltage spikes and improve output voltage performance of Boost converters has been verified by simulation and experiments.
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Key words:
- Boost converter /
- switching characteristics /
- voltage spikes /
- transient model /
- parasitic parameters
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图 1 考虑寄生参数的Boost变换器等效电路
Figure 1. Equivalent circuit of Boost converter with parasitic parameters
图 5 Boost变换器在开通瞬态阶段Ⅱ~Ⅲ和关断瞬态阶段Ⅳ~Ⅴ等效电路
Figure 5. Equivalent circuits of Boost converter in transient phase Ⅱ-Ⅲ of turn-on and phase Ⅳ-Ⅴ of turn-off
图 9 不同寄生电感及驱动电阻下的开关瞬间电压过冲
Figure 9. Switching transient voltage overshoots with different parasitic inductance and driving resistance
图 14 不同寄生电容下的开关瞬间电压过冲
Figure 14. Switching transient voltage overshoots with different parasitic capacitance
图 16 优化前开关瞬间输出电压交流分量波形
Figure 16. Ac-component waveform of output voltage of switching transient before optimization
图 17 减缓开关速度后开关瞬间输出电压交流分量波形
Figure 17. Ac-component waveform of output voltage of switching transient after slowing down switching speed
图 18 减小输出端寄生电感后开关瞬间输出电压交流分量波形
Figure 18. Ac-component waveform of output voltage of switching transient after reducing parasitic inductance of output end
图 19 不同驱动电阻下MOSFET在开关瞬间的能量耗散图和Boost变换器的效率曲线
Figure 19. Energy dissipation diagram of MOSFET at switching moment and efficiency curve of Boost converter with different driving resistors
表 1 测试电路参数
Table 1. Parameters of test circuit
模块 参数 数值 功率回路 uo-dc/V 120 L/μH 420 Cbuffer/μF 680 RL/Ω 20 驱动回路 UCC/V 15 UEE/V -9 D/% 50 fs/kHz 50 
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