Flash芯片电流“尖峰”现象的脉冲激光试验

上官士鹏; 朱翔; 陈睿; 马英起; 李赛; 韩建伟

doi:10.13700/j.bh.1001-5965.2020.0082

Flash芯片电流“尖峰”现象的脉冲激光试验

doi: 10.13700/j.bh.1001-5965.2020.0082

上官士鹏^{1, 2, ,},
朱翔^{1, 2},
陈睿¹,
马英起¹,
李赛^{1, 2},
韩建伟¹

1.
中国科学院国家空间科学中心, 北京 100190
2.
中国科学院大学, 北京 100049

基金项目:

国家自然科学基金 11875060

详细信息

作者简介:
上官士鹏  男, 博士, 副研究员。主要研究方向: 半导体器件空间环境效应

朱翔  男, 博士, 副研究员。主要研究方向: 半导体器件空间环境效应

陈睿  男, 博士, 副研究员。主要研究方向: 半导体器件空间环境效应

马英起  男, 博士, 副研究员。主要研究方向: 半导体器件空间环境效应

李赛  女, 博士研究生。主要研究方向: 半导体器件空间环境效应

韩建伟  男, 博士, 研究员。主要研究方向: 核物理

通讯作者:
上官士鹏, E-mail: shangguansp@nssc.ac.cn

中图分类号: V221⁺.3
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出版历程
- 收稿日期: 2020-03-04
- 录用日期: 2020-03-07
- 网络出版日期: 2021-05-20

Experimental results of high current spike in Flash chip by pulsed laser

SHANGGUAN Shipeng^{1, 2
, ,},
ZHU Xiang^{1, 2},
CHEN Rui¹,
MA Yingqi¹,
LI Sai^{1, 2},
HAN Jianwei¹

1.
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds:

National Natural Science Foundation of China 11875060

More Information

Corresponding author: SHANGGUAN Shipeng, E-mail: shangguansp@nssc.ac.cn

摘要

摘要:
利用皮秒脉冲激光单粒子效应试验装置研究了一款宇航级Flash芯片的电流“尖峰”（HCS）现象。利用激光准确定位的特点，确定电流“尖峰”是由芯片的电荷泵单元充放电引起的，不同的激光能量、入射位置会触发不同频率、相同幅值的电流“尖峰”现象，虽然电流“尖峰”发生的瞬间电流增大的现象与单粒子锁定效应表现一致，但机理完全不同。当激光能量足够高（对应于重离子LET值99.8 MeV·cm²/mg）时，在电荷泵的同一个敏感位置累积多次辐照不断触发芯片发生电流“尖峰”，芯片会因多次充放电而损坏。
- Flash芯片 /
- 电流“尖峰”(HCS) /
- 单粒子锁定 /
- 脉冲激光 /
- 电荷泵
Abstract:
High Current Spike (HCS) of nonvolatile Flash chip has been tested by pico-second pulsed laser single event effect experimental facility. Accurate positioning of pulsed laser confirmed that sensitive area triggering HCS was charge pump of the chip. Different laser energies and specific locations in charge pump can trigger the same amplitude current spikes with different time cycle, although HCS has the same phenomenon with single event latch-up, and completely different mechanisms. When laser energy was high enough to be equivalent to heavy ion's LET value of 99.8 MeV·cm²/mg, continuous irradiation on the same sensitive area of charge pump can trigger the high current spike of the chip, which will cause catastrophic failure to the chip due to multiple charging and discharging.
- Flash chip /
- High Current Spike (HCS) /
- single event latch-up /
- pulsed laser /
- charge pump

HTML全文

图 1 皮秒脉冲激光单粒子效应试验装置原理图

Figure 1. Schematic diagram of pico-second pulsed laser single event effect experimental facility

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图 2 试验步骤

Figure 2. Test process

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图 3 同一个位置HCS示波器不同显示分辨率的电流波形

Figure 3. Current waveform of same area caused HCS tested by different resolution of oscilloscope

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图 4 Flash芯片内部构造

Figure 4. Internal configuration of Flash chip

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图 5 不同激光能量下的芯片电流“尖峰”波形

Figure 5. Waveform of chip HCS caused by different laser energies

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图 6 等效电荷泵原理

Figure 6. Mechanism of equivalent charge pump

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图 7 电荷泵的位置n点触发的电流“尖峰”过程

Figure 7. HCS caused by different area n of charge pump

下载: 全尺寸图片幻灯片

表 1 被测试芯片参数

Table 1. Tested chip parameters

类型	型号	厂商	质量等级	工艺尺寸	封装	工作电压	功耗电流
Flash芯片	YB29LV160	复旦微电子科技有限公司	宇航级	0.13 μm	COB	3.3 V	< 1 mA(静态)

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参考文献(16)

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