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直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

王文文 刁训刚 王峥 王天民

王文文, 刁训刚, 王峥, 等 . 直流磁控溅射ZnO:Al薄膜的光电和红外发射特性[J]. 北京航空航天大学学报, 2005, 31(02): 236-241.
引用本文: 王文文, 刁训刚, 王峥, 等 . 直流磁控溅射ZnO:Al薄膜的光电和红外发射特性[J]. 北京航空航天大学学报, 2005, 31(02): 236-241.
Wang Wenwen, Diao Xungang, Wang Zheng, et al. Optical, electrical and infrared emissing properties of DC magnetron sputtered ZnO:Al thin films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2005, 31(02): 236-241. (in Chinese)
Citation: Wang Wenwen, Diao Xungang, Wang Zheng, et al. Optical, electrical and infrared emissing properties of DC magnetron sputtered ZnO:Al thin films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2005, 31(02): 236-241. (in Chinese)

直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

详细信息
    作者简介:

    王文文(1980-),女,山东临沂人,博士生, wangww1016@163.com.

  • 中图分类号: O 472+1; O 472+3; O 472+4

Optical, electrical and infrared emissing properties of DC magnetron sputtered ZnO:Al thin films

  • 摘要: 以锌、铝合金(ω(Al)=3%)为靶材,利用直流反应磁控溅射法制备了系列掺铝氧化锌ZnO:Al(ZAO)薄膜样品,通过X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、霍耳效应及红外发射率测量仪等测试仪器或方法表征了样品的结构、形貌、光学、电学及红外发射特性.测得样品最低电阻率达到1.8×10-6(Ω·m),最大禁带宽度为3.47 eV,可见光区平均透过率达到90%,8~14 μm波段平均红外发射率在0.26~0.9之间.上述特性均随衬底温度和溅射功率的变化有着规律的变化.当方块电阻小于45 Ω时,薄膜在8~14 μm波段平均红外发射率与方块电阻遵循二阶函数变化规律.

     

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  • 收稿日期:  2004-06-20
  • 网络出版日期:  2005-02-28

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