直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

王文文; 刁训刚; 王峥; 王天民

直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

北京航空航天大学理学院, 北京 100083

详细信息

作者简介:
王文文(1980-),女,山东临沂人,博士生, wangww1016@163.com.

中图分类号: O 472⁺1; O 472⁺3; O 472⁺4
计量
- 文章访问数: 3067
- HTML全文浏览量: 217
- PDF下载量: 1509
- 被引次数: 0
出版历程
- 收稿日期: 2004-06-20
- 网络出版日期: 2005-02-28

Optical, electrical and infrared emissing properties of DC magnetron sputtered ZnO:Al thin films

School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China

摘要

摘要: 以锌、铝合金(ω(Al)=3%)为靶材,利用直流反应磁控溅射法制备了系列掺铝氧化锌ZnO:Al(ZAO)薄膜样品,通过X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、霍耳效应及红外发射率测量仪等测试仪器或方法表征了样品的结构、形貌、光学、电学及红外发射特性.测得样品最低电阻率达到1.8×10^-6(Ω·m),最大禁带宽度为3.47 eV,可见光区平均透过率达到90%,8~14 μm波段平均红外发射率在0.26~0.9之间.上述特性均随衬底温度和溅射功率的变化有着规律的变化.当方块电阻小于45 Ω时,薄膜在8~14 μm波段平均红外发射率与方块电阻遵循二阶函数变化规律.
- 透明导电薄膜 /
- 磁控溅射 /
- ZnO:Al薄膜 /
- 方块电阻 /
- 禁带宽度 /
- 红外发射率
Abstract: Aluminium-doped zinc oxide (ZnO:Al) films were deposited on glass substrate by DC reactive magnetron sputtering from a Zn-Al metallic target (ω(Al)=3%). Films with novel, tangly string-like surface morphology, an average optical transmittance up to 90% in the visible range, a widest band gap of 3.47 eV and electrical resistivity down to 1.80×10^-6 Ω·m were obtained. The infrared emissivity in 8~14 μm waveband is distributed in the range of 0.26~0.9. The surface morphology, crystallinity, infrared emissivity as well as the electrical and optical properties of the samples were characterized using X-ray diffraction, scanning electron microscopy, spectrophotometry, infrared radiometer and Hall-effect measurement. The optical, electrical and infrared emissing properties of the films depend on substrate temperature and sputtering power obviously and regularly. The relationship between sheet resistance and infrared emissivity of ZnO:Al(ZAO) thin films follows a quadratic function as the sheet resistance is below 45 Ω.
- transparent conductive oxides thin films /
- magnetron sputtering /
- ZnO:Al thin films /
- sheet resistance /
- forbidden bands /
- infrared emissivity

HTML全文

参考文献(1)

[1] Beneking C, Rech B, Wieder S, et al. Recent developments of silicon thin film solar cells on glass substrates[J]. Thin Solid Films,1999,351:241~246 [2] 徐成海,陆峰,谢元华. 氧化锌铝透明导电膜[J].真空电子技术,2003,(6):39~49 Xu Chenghai, Lu Feng, Xie Yuanhua. Transparent conductive zinc, aluminium oxide films[J]. Technology of Vacuum Electric, 2003,(6):39~49(in Chinese) [3] Chopra K L, Major S, Pandya D K. Transparent conductors—a status review[J]. Thin Solid Films, 1983, 102:1~46 [4] Ellmer K, Kudella F, Mientus R, et al. Influence of discharge parameters on the layer properties of reactive magnetron sputtered ZnO:Al films[J]. Thin Solid Films, 1994, 247:15~23 [5] Zafar S, Ferekides C S, Morel D L. Characterization and analysis of ZnO:Al deposited by reactive magnetron sputtering[J]. Journal of Vacuum Science and Technology A, 1995, 13:2177~2182 [6] Hong R J, Jiang X, Heide G, et al. Growth behaviours and properties of the ZnO:Al films prepared by reactive mid-frequency magnetron sputtering[J]. Journal of Crystal Growth, 2003,249:461~469 [7] Szyszka B, Sittinger V, Jiang X, et al. Transparent and conductive ZnO:Al films deposited by large area reactive magnetron sputtering[J]. Thin Solid Films, 2003,442:179~183 [8] 范志新,陈玖琳,孙以材. ZAO透明导电薄膜的特性、制备与应用[J]. 真空,2000,(5):10~14 Fan Zhixin, Chen Jiulin, Sun Yicai. Propertis, preparation and application of transparent conductive ZAO thin films[J]. Vacuum, 2000,(5):10~14(in Chinese) [9] 裴志亮,谭明晖,陈猛,等. 透明导电氧化物ZnO:Al(ZAO)薄膜的研究[J]. 金属学报,2000,36(1):72~76 Pei Zhiliang, Tan Minghui, Chen Meng, et al. Study of transparent conductive oxides ZnO:Al(ZAO)thin films[J]. Journal of Metal, 2000,36(1):72~76(in Chinese) [10] 陈源,张德恒,马瑾. 不同有机衬底上沉积的ZnO:Al透明导电膜的研究[J]. 半导体杂志,1999,24(3):1~4 Chen Yuan, Zhang Deheng, Ma Jin. Study of ZnO:Al transparent conductive films deposited on different organic substrates[J]. Journal of Semiconductor, 1999,24(3):1~4(in Chinese) [11] 裴志亮,孙超,关德慧,等. ZnO:Al(ZAO)薄膜的特性研究[J]. 自然科学进展,2001,(4):392~397 Pei Zhiliang, Sun Chao, Guan Dehui, et al. Study of the properties of ZnO:Al(ZAO) thin films[J]. Development of Natural Science, 2001,(4):392~397(in Chinese) [12] 唐伟忠. 薄膜材料制备原理、技术及应用[M].第二版.北京:冶金工业出版社,1999,119~122 Tang Weizhong. Preparation theory, technology and application of thin film materials[M]. 2 Edition. Beijing:Metallurgical Industry Press, 1999, 119~122 (in Chinese) [13] Hao X T, Ma J, Ma H L, et al. Characterization of ZnO:Al films deposited by radio frequency magnetron-sputtering at low temperature[J]. Science in China A, 2002, 45(3):394~399 [14] Frank G, Kauer E, Kostlin H. Transparent heat-reflecting coatings based on highly doped semiconductors[J]. Thin Solid Films, 1981, 77:107 [15] Szczyrbowski J, Brauer G, Ruske M, et al. New low emissivity coating based on TwinMag sputtered TiO₂ and Si₃N₄ layers[J]. Thin Solid Films, 1999, 351:254~259 [16] Mardare D, Tasca M, Delibas M, et al. On the structural properties and optical transmittance of TiO₂ radio frequency sputtered thin films[J]. Applied Surface Science, 2000,156:200~206

施引文献

资源附件(0)

访问统计