Volume 29 Issue 9
Sep.  2003
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Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film[J]. Journal of Beijing University of Aeronautics and Astronautics, 2003, 29(9): 753-758. (in Chinese)
Citation: Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film[J]. Journal of Beijing University of Aeronautics and Astronautics, 2003, 29(9): 753-758. (in Chinese)

Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film

  • Received Date: 16 Jul 2002
  • Publish Date: 30 Sep 2003
  • The preferred growth of nanosized crystal silicon (nc-Si) in doped hydrogenated nanocrystalline silicon (nc-Si:H) films which were prepared using plasma enhanced chemical vapor deposition (PECVD) system by RF(13.56 MHz) and DC bias stimulating was found. Its microstructure was investigated using X-ray diffraction (XRD), Raman spectrum meter, atomic force microscope (AFM) and high resolution transmission electronic microscope (HRTEM). Nc-Si about 10 nm was distributed in the silicon-hydrogen amorphous networks in the films. The peaks of XRD spectra of phosphorus doped nc-Si:H films was at 2θ≈33°, the exponent of crystalline plane was (130). The peaks of XRD spectra of boron doped nc-Si:H films was at 2θ≈47°, the exponent of crystalline plane was (220), respectively. The considerable reasons were investigated. The relation between size of nc-Si, crystalline volume fraction and depositing parameters were studied.

     

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  • [1] Zhu X, Birringer R, Herr U, et al. X-ray diffraction studies of the structure of nanometer-sized crystalline materials[J]. Physical Review B, 1987, 35(17):9085~9090 [2] He Y L, Hu G Y, Yu M B, et al. Conduction mechanism of hydrogenated nanocrystalline silicon films[J]. Physical Review B, 1999, 59(19):15352~15357 [3] Kalkan A K, Bae S, Li H D, et al. Nanocrystalline silicon thin film with arrayed void-column network deposited by high density plasma[J]. Journal of Applied Physics, 2000, 88(1):555~561 [4] 王金良,徐刚毅,王天民.掺杂纳米硅薄膜的微结构[J].自然科学进展,2001,11(3):331~336 Wang Jinliang, Xu Gangyi, Wang Tianmin. The structure of doped nc-Si:H film. Development of Natrual Science, 2001, 11(3):331~336 (in Chinese) [5] Akihisa M, Toshihiko Y, Satoshi Y, et al. Structural study on amorphous-microcrystalline mixed-phase Si:H films[J]. Japanese Journal of Applied Physics, 1981, 20(6):439~442 [6] Veprek S, Iqbal Z, Sarott F A. A thermodynamic criterion of the crystalline-to-amorphous transition in silicon[J]. Philosophical Magazine B, 1982, 45(1):137~145 [7] Kobliska R J, Solin S A. Raman spectrum of wurtzite silicon[J]. Physical Review B, 1973, 8(8):3799~3802 [8] Guo L H, Lin R M. Studies on the formation of microcrystalline silicon with PECVD under low and high working pressure[J]. Thin Solid Films, 2000,376:249~254 [9] Yasuo W, Shigeru N. Grain crowth mechanism of heavily phosphorus-implanted polycrystalline silicon[J]. Journal of Electrochem Soc:Solid-state Science and Technology, 1978, 125(9):1499~1504. [10] Hamers R J, Wang Y J, Shan J. Atomic-level spatial distributions of dopants on silicon surfaces:toward a microscopic understanding of surface chemical reactivity[J]. Applied Surface Science, 1996,107:25~34 [11] Khait Y L, Beserman R. Kinetic many-body of recrystallization of pure and doped amorphous silicon[J]. Physical Review B, 1973, 33(4):2983~2986 [12] 张克从.近代晶体学基础(上册)[M].第二版.北京:科学出版社,1998.298 Zhang Kecong. Fundamental of modern crystallography (the First Volume) [M]. The Second Version. Beijing:Publishing of Science,1998.298 (in Chinese) [13] 冯 端,金国钧.凝聚态物理学新论[M].上海:上海科学技术出版社,1992.36~37 Feng Duan, Jin Guojun. Recent developments in condensed matter physics[M]. Shanghai:Publishing House of Science and Technology of Shanghai, 1992.36~37 (in Chinese) [14] Nazarov A N, Pinchuk V M, Lysenko V S, et al. Enhanced activation of implanted dopant impurity in hydrogentated crystalline silicon[J]. Physical Review B, 1998, 58(7):3522~3525 [15] Veprek S, Sarott F A, Iqbal Z. Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon[J]. Physical Review B, 1987, 36(6):3344~3350 [16] 徐刚毅,王天民,李国华,等.纳米硅薄膜的Raman光谱[J].半导体学报,2000,21(12):1170~1176 Xu Gangyi, Wang Tianmin, Li Guohua, et al. Ranman spectra of nanocrystalline silicon films[J]. Chinese Journal of Semiconductors, 2000, 21(12):1170~1176(in Chinese) [17] Cardona M. Light scattering in solid Ⅱ[M]. Berlin :Spring-Verlag, 1982 [18] Hasegawa S, Narikawa S, Kurata Y. ESR and electrical properties of P-doped microcrystalline Si [J]. Philosophical Magazine B, 1983, 48(5):431~447
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