S-Band MMIC Amplifier Design Using HEMT

YANG Xue-bin; Lü Shan-wei; SU Dong-lin; WANG Liang-chen

Volume 26 Issue 3

Mar. 2000

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Article Contents

Journal of Beijing University of Aeronautics and Astronautics > 2000 > 26(3): 290-292.

YANG Xue-bin, Lü Shan-wei, SU Dong-lin, et al. S-Band MMIC Amplifier Design Using HEMT[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(3): 290-292. (in Chinese)

Citation:

YANG Xue-bin, Lü Shan-wei, SU Dong-lin, et al. S-Band MMIC Amplifier Design Using HEMT[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(3): 290-292. (in Chinese)

YANG Xue-bin, Lü Shan-wei, SU Dong-lin, et al. S-Band MMIC Amplifier Design Using HEMT[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(3): 290-292. (in Chinese)

Citation:

YANG Xue-bin, Lü Shan-wei, SU Dong-lin, et al. S-Band MMIC Amplifier Design Using HEMT[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(3): 290-292. (in Chinese)

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S-Band MMIC Amplifier Design Using HEMT

1.
Beijing University of Aeronautics and Astronautics,Dept. of Electronic Engineering
2. Institute of Semiconductors Chinese Academy of Sciences

Received Date: 29 Apr 1999
Publish Date: 31 Mar 2000

Abstract

Abstract

The design procedure of S-Band microwave monolithic integrated circuits (MMIC's) amplifier using high electron mobility transistors (HEMT's) is proposed. The topology of the circuit designed is taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. Simulation results by Libra2.1 show that the gain in 2~3GHz is 14.2dB, gain ripple is smaller than 0.4dB and the noise figure is 2.7dB. These parameters satisfy the practical requirement.
- microwave transistor amplifiers,
- microwave integrated circuits,
- simulation,
- high electron mobility transistors