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Volume 26 Issue 4
Apr.  2000
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Journal of Beijing University of Aeronautics and Astronautics  > 2000  >  26(4): 485-489.
CHEN Chen, HE Yu-liang, QI Xiang-linet al. Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(4): 485-489. (in Chinese)
Citation: CHEN Chen, HE Yu-liang, QI Xiang-linet al. Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2000, 26(4): 485-489. (in Chinese)
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Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films

  • Beijing University of Aeronautics and Astronautics,School of Science

  • Received Date: 20 Jan 1999
  • Publish Date: 30 Apr 2000
    Abstract
  • A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc-Si:H) indicate that the room temperature dark conductivity σ is in the range of 10-1-101S·cm-1,two magnitudes higher than that of undoped nc-Si:H films. We also found the relationship between doping concentration Np and σ, that is strikingly similar to the pc-Si films. The conductivity activation energy ΔE of P-doped nc-Si:H is (1-3)×10-2eV, lower than the undoped nc-Si:H films. Otherwise, we investigated the piezo-resistance effect of P doped samples. Compared with undoped nc-Si:H samples, the piezo-resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.

     

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