留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

平面工艺功率型半导体晶体管铝迁移实验

吕卫民 胡冬 谢劲松 翁璐

吕卫民, 胡冬, 谢劲松, 等 . 平面工艺功率型半导体晶体管铝迁移实验[J]. 北京航空航天大学学报, 2011, 37(12): 1515-1518.
引用本文: 吕卫民, 胡冬, 谢劲松, 等 . 平面工艺功率型半导体晶体管铝迁移实验[J]. 北京航空航天大学学报, 2011, 37(12): 1515-1518.
Lü Weimin, Hu Dong, Xie Jinsong, et al. Experiments of aluminum migration of power silicon transistor using planar process[J]. Journal of Beijing University of Aeronautics and Astronautics, 2011, 37(12): 1515-1518. (in Chinese)
Citation: Lü Weimin, Hu Dong, Xie Jinsong, et al. Experiments of aluminum migration of power silicon transistor using planar process[J]. Journal of Beijing University of Aeronautics and Astronautics, 2011, 37(12): 1515-1518. (in Chinese)

平面工艺功率型半导体晶体管铝迁移实验

基金项目: 总装预研基金资助项目(9140A27020210JB1404)
详细信息
    作者简介:

    吕卫民(1970-),男,山东烟台人,博士生,lwm_yt@sina.com.

  • 中图分类号: TN 405.97

Experiments of aluminum migration of power silicon transistor using planar process

  • 摘要: 在平面工艺制造的功率型半导体晶体管芯片表面,发现高强度电场条件下存在跨越0.05 mm半绝缘硅带的铝迁移现象,对此开展了一系列实验研究. 通过开帽物理观察与分析、低温测试与烘干验证、迁移物质分析对比,确定了迁移现象中的迁移物质,同时分别取证环境温度、湿度、芯片表面污染物以及器件局部结构与此迁移现象的关联性,以此提出了迁移机理假说,为在不同的诱发条件下对此迁移机理进行确认和量化研究提供指导.

     

  • [1] Xie Jingsong,He Jingjing,McCluskey Patrick.Aluminum migration on the die surfaces of a power transistor in high-intensity electric fields //Proceedings of the 40th International Symposium on Microelectronics.San Jose:IMAPS,2007 [2] Michael L,Korwin-Pawlowski,Guillot Jean Michel,et al.Planar P-N junction semiconductor structure with multilayer passivation:United States,5677562 .1997-10-14 [3] Michal Bairanzade.Application note AN1628/D understanding power transistors breakdown parameters .Denver,CO:Motorola Literature Distribution,1997 .http://www.eetasia.com/ART_8800068404_499501_AN_f01d6f08.HTM [4] Mimura A,Oohayashi M,Murakami S,et al.High-voltage planar structure using SiO2-SIPOS-SiO2 Film[J].IEEE Electron Device Letters,1985,6 (4):189-191 [5] 史良钰.SIPOS钝化功率晶体管双线击穿现象的研究 .哈尔滨:哈尔滨理工大学应用科学学院,2009 Shi Liangyu.Study of double-line breakdown phenomenon for power transistor with SIPOS passivation layer .Harbin:School of Applied Sciences,Harbin University of Science and Technology,2009(in Chinese) [6] 姚立真.可靠性物理 [M].北京:电子工业出版社,2004:330-337 Yao Lizhen.Reliability physics[M].Beijing:Publishing House of Electronics Industry,2004:330-337(in Chinese) [7] J-STD-020C Moisture/reflow sensitivity classification for non-hermetic solid state surface mount devices[S] [8] Chung S K.Analytic model for field-plate-edge breakdown of planar devices terminated with field plate and semiresistive layer //IEE Proceedings on Science,Measurement and Technology.Stevenage:IET,2004:21-24 [9] Stoc kmeier T,Lilja K.SIPOS-passivation for high voltage power devices with planar junction termination //Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.Baltimore:IEEE,1991:145-148
  • 加载中
计量
  • 文章访问数:  2306
  • HTML全文浏览量:  10
  • PDF下载量:  659
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-10-26
  • 刊出日期:  2012-12-30

目录

    /

    返回文章
    返回
    常见问答