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三维TSV集成电路电磁敏感性分析方法

秦海潮 阎照文 苏东林 张伟

秦海潮, 阎照文, 苏东林, 等 . 三维TSV集成电路电磁敏感性分析方法[J]. 北京航空航天大学学报, 2017, 43(12): 2406-2415. doi: 10.13700/j.bh.1001-5965.2016.0847
引用本文: 秦海潮, 阎照文, 苏东林, 等 . 三维TSV集成电路电磁敏感性分析方法[J]. 北京航空航天大学学报, 2017, 43(12): 2406-2415. doi: 10.13700/j.bh.1001-5965.2016.0847
QIN Haichao, YAN Zhaowen, SU Donglin, et al. Electromagnetic susceptibility analysis method for 3D TSV ICs[J]. Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(12): 2406-2415. doi: 10.13700/j.bh.1001-5965.2016.0847(in Chinese)
Citation: QIN Haichao, YAN Zhaowen, SU Donglin, et al. Electromagnetic susceptibility analysis method for 3D TSV ICs[J]. Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(12): 2406-2415. doi: 10.13700/j.bh.1001-5965.2016.0847(in Chinese)

三维TSV集成电路电磁敏感性分析方法

doi: 10.13700/j.bh.1001-5965.2016.0847
基金项目: 

国家自然科学基金 61271044

国家自然科学基金 61427803

详细信息
    作者简介:

    秦海潮 男, 博士研究生。主要研究方向:电磁兼容

    阎照文 男, 博士, 教授, 博士生导师。主要研究方向:电磁兼容和信号完整性分析

    苏东林 女, 博士, 教授, 博士生导师。主要研究方向:电磁兼容

    张伟 女, 硕士研究生。主要研究方向:电磁兼容和信号完整性分析

    通讯作者:

    阎照文, E-mail: yanzhaowen@buaa.edu.cn

  • 中图分类号: V221+.3;TB553

Electromagnetic susceptibility analysis method for 3D TSV ICs

Funds: 

National Natural Science Foundation of China 61271044

National Natural Science Foundation of China 61427803

More Information
  • 摘要:

    研究了三维集成电路(3D ICs)中硅通孔(TSV)的建模方法及三维集成电路电源分配网络(PDN)的建模方法,并结合印制电路板(PCB)的电源分布网络和芯片PDN模型,提出了一种对板级三维集成电路进行电源网络上电磁敏感性(EMS)的建模和协同分析方法。首先给出了地-信号(GS)结构和地-信号1-信号2-地(GSSG)结构TSV的电路模型,电路模型与数值仿真结果做了对比,验证了TSV电路建模方法的准确性。接着对PCB板级三维集成电路中PCB的电源分布网络,PCB过孔,集成电路封装参数进行建模。最后创建了一个PCB-三维集成电路电磁敏感性级联分析模型,使用该模型来研究三维集成电路对电源干扰的敏感特性,并由此指导三维集成电路的敏感性分析。

     

  • 图 1  GS结构TSV对的立体图

    Figure 1.  Space diagram of GS-structure TSV pair

    图 2  一个GS结构TSV对的电路模型

    Figure 2.  Circuit model of single GS-structure TSV pair

    图 3  HFSS和ADS中S11S21的结果对比

    Figure 3.  Comparison of S11 and S21 resultsbetween HFSS and ADS

    图 4  GSSG结构的TSV示意图

    dBUMP—凸点直径;dTSV—TSV直径;hBUMP—凸点高度。

    Figure 4.  Schematic diagram of GSSG-structure TSV

    图 5  GSSG结构TSV的电路模型

    Figure 5.  Circuit model of GSSG-structure TSV

    图 6  ADS中建立的GSSG结构TSV的等效电路图

    Figure 6.  Equivalent circuit diagram of GSSG-structure TSV in ADS

    图 7  HFSS和ADS中S参数仿真结果对比

    Figure 7.  Comparison of S parameter simulation results between HFSS and ADS

    图 8  完整电源/地矩形平面

    Figure 8.  Intact power/ground plane

    图 9  单个过孔结构的分解示意图

    Figure 9.  Schematic diagram of single via hole structure divided into small parts

    图 10  单平面对中单个过孔的等效电路

    Figure 10.  Equivalent circuit of single via in single plane

    图 11  三维集成电路与PCB板连接结构

    Figure 11.  Connecting structure between 3D ICs and PCB

    图 12  HFSS中建立的电源过孔模型

    Figure 12.  Power via hole models established in HFSS

    图 13  在电源过孔中心电源/地平面间设置集总端口

    Figure 13.  Lumped port added between power and ground plane in center of power via hole

    图 14  电源过孔电路模型

    Figure 14.  Circuit model of power via hole

    图 15  BGA 64封装视图

    Figure 15.  View of a BGA 64 package

    图 16  选取pin1~pin4作为GPPG引脚

    Figure 16.  pin1 to pin4 chosen as GPPG pins

    图 17  pin1~pin4引脚的封装模型

    Figure 17.  Package circuit model of pin1 to pin4

    图 18  ADS原理图

    Figure 18.  Schematic diagram of ADS

    图 19  IC-PDN平面Z参数

    Figure 19.  Z parameter of IC-PDN plane

    图 20  LC串联电路模型

    Figure 20.  Series circuit model with LC

    图 21  敏感性协同仿真模型

    Figure 21.  EMS collaborative simulation model

    图 22  敏感性协同仿真结果

    Figure 22.  EMS collaborative simulation results

    表  1  GS结构TSV对的模型参数

    Table  1.   Model parameters of GS-structure TSV pair

    μm
    参数 数值
    h 100
    rTSV 10
    tOX 0.6
    pTSV 40
    t 1
    t1 1
      注:tOX—SiO2厚度;t1—铜平面厚度;t—SiO2平面厚度。
    下载: 导出CSV

    表  2  GSSG结构TSV的模型参数

    Table  2.   Model parameters of GSSG-structure TSV

    μm
    参数 数值
    hTSV 100
    rTSV 10
    tOX 0.6
    pTSV 40
    rBUMP 15
    hBUMP 5
    t 1
      注:rBUMP—凸点半径; hTSV—TSV高度。
    下载: 导出CSV

    表  3  GSSG结构TSV的材料特性

    Table  3.   Material characteristics of GSSG-structure TSV

    参数 数值
    σSi/(S·m-1) 10
    σTSV/(107 S·m-1) 5.8
    σBUMP/(107 S·m-1) 5.8
    εr, Si 11.9
    εr, OX 4
    εr, BCB 2.65
    μr, TSV 1
    μr, BUMP 1
      注:σBUMP—凸点电导率;εr, Si—硅相对介电常数;εr, BCB —BCB相对介电常数;μr, TSVμr, BUMP —TSV、凸点相对磁导率。
    下载: 导出CSV

    表  4  BGA封装的pin1~pin4的参数提取结果

    Table  4.   Parameter extraction results of BGA package from pin1 to pin4

    电阻/Ω 电容与互容/pF 自感与互感/nH
    R11=0.143 C11=0.209 L11=3.732
    R22=0.142 C22=0.221 L22=3.697
    R33=0.134 C33=0.218 L33=3.408
    R44=0.122 C44=0.210 L44=3.092
    C12=0.073 L21=1.621
    C23=0.071 L13=1.062
    C24=0.002 L14=0.521
    C34=0.060 L23=1.492
    C13=0.002 L24=0.619
    L34=0.749
    下载: 导出CSV
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出版历程
  • 收稿日期:  2016-11-03
  • 录用日期:  2016-12-16
  • 刊出日期:  2017-12-20

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