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VASIMR中螺旋波等离子体源设计

李波 王一白 张普卓 王守国 中国科学院微电子研究 北京

李波, 王一白, 张普卓, 等 . VASIMR中螺旋波等离子体源设计[J]. 北京航空航天大学学报, 2012, 38(6): 720-725.
引用本文: 李波, 王一白, 张普卓, 等 . VASIMR中螺旋波等离子体源设计[J]. 北京航空航天大学学报, 2012, 38(6): 720-725.
Li Bo, Wang Yibai, Zhang Puzhuo, et al. Design of helicon plasma source for VASIMR[J]. Journal of Beijing University of Aeronautics and Astronautics, 2012, 38(6): 720-725. (in Chinese)
Citation: Li Bo, Wang Yibai, Zhang Puzhuo, et al. Design of helicon plasma source for VASIMR[J]. Journal of Beijing University of Aeronautics and Astronautics, 2012, 38(6): 720-725. (in Chinese)

VASIMR中螺旋波等离子体源设计

基金项目: 国家自然科学基金资助项目(10705003)
详细信息
  • 中图分类号: V439

Design of helicon plasma source for VASIMR

  • 摘要: 螺旋波等离子体具有密度高,可控性强且无电极等优点,被应用于可变比冲磁等离子体火箭(VASIMR,Variable Specific Impulse Magnetoplasma Rocket)中.设计了一个螺旋波等离子体源,并给出了其中2个关键部分——磁场线圈和螺旋波天线的设计.对螺旋波等离子体源进行了初步实验,结果表明,电子密度随射频输入功率的增加几乎呈线性上升,估计电子密度的量级在通入工质后完全可达1011 cm-3.

     

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出版历程
  • 收稿日期:  2011-03-02
  • 网络出版日期:  2012-06-30

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