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低能Ar+、Xe+轰击SiO2的溅射模型

张建华 夏勇 丁利 商圣飞

张建华, 夏勇, 丁利, 等 . 低能Ar+、Xe+轰击SiO2的溅射模型[J]. 北京航空航天大学学报, 2017, 43(9): 1766-1772. doi: 10.13700/j.bh.1001-5965.2016.0744
引用本文: 张建华, 夏勇, 丁利, 等 . 低能Ar+、Xe+轰击SiO2的溅射模型[J]. 北京航空航天大学学报, 2017, 43(9): 1766-1772. doi: 10.13700/j.bh.1001-5965.2016.0744
ZHANG Jianhua, XIA Yong, DING Li, et al. Sputtering model of SiO2 for low energy Ar+ and Xe+ bombardment[J]. Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(9): 1766-1772. doi: 10.13700/j.bh.1001-5965.2016.0744(in Chinese)
Citation: ZHANG Jianhua, XIA Yong, DING Li, et al. Sputtering model of SiO2 for low energy Ar+ and Xe+ bombardment[J]. Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(9): 1766-1772. doi: 10.13700/j.bh.1001-5965.2016.0744(in Chinese)

低能Ar+、Xe+轰击SiO2的溅射模型

doi: 10.13700/j.bh.1001-5965.2016.0744
详细信息
    作者简介:

    张建华   男, 博士, 副研究员; 主要研究方向:航空宇航推进理论与技术、稀薄气体动力学、火箭发动机流场计算及测试

    通讯作者:

    张建华, E-mail:zjh@buaa.edu.cn

  • 中图分类号: V439+.1;V45;TB321

Sputtering model of SiO2 for low energy Ar+ and Xe+ bombardment

More Information
  • 摘要:

    为了得到在低能条件下更为精确的Ar+和Xe+轰击SiO2的溅射模型,对已有化合物溅射模型进行调研分析,总结了3种溅射模型,分别为Pencil模型、Bach模型和Seah模型,并对其不足之处加以分析。在Seah模型基础上,对溅射阈值采用新的计算方法,并利用等效原子法改进溅射参数和表面键能的计算方法,形成改进后的新模型。结合已有的关于Ar+和Xe+法向轰击SiO2的实验数据,对4种模型的计算结果进行对比分析。对于Ar+和Xe+法向轰击SiO2,改进后的溅射模型的均方根误差最小,拟合优度最高,均优于其他3种模型。说明在低能状态下,采用改进后的模型可以更为精确地计算Ar+和Xe+轰击SiO2的溅射率。

     

  • 图 1  Seah模型中当x=0, 0.25, 0.5, 1时溅射率变化

    Figure 1.  Variation of sputtering yields when x=0, 0.25, 0.5, 1 in Seah model

    图 2  不同能量Ar+法向轰击SiO2的溅射率

    Figure 2.  Energy dependence of sputtering yields of SiO2 for bombardment at normal incidence with Ar+

    图 3  不同能量Xe+法向轰击SiO2的溅射率

    Figure 3.  Energy dependence of sputtering yields of SiO2 for bombardment at normal incidence with Xe+

    图 4  不同x取值下的Seah模型与本文改进模型对比

    Figure 4.  Contrast of advanced model and Seah model at different values of x

    表  1  Seah模型中计算Q的相关系数

    Table  1.   Correlation coefficients for calculation of Q in Seah model

    离子 a b c d e f
    Ar+ 0.020 6 15.483 19.83 0.022 1 16 50
    Xe+ 0.029 6 9.729 29.52 0.018 8 30 50
    下载: 导出CSV

    表  2  不同模型对于Ar+法向轰击SiO2实验数据的拟合

    Table  2.   Fitting of experimental data of SiO2 bombarded at normal incidence by Ar+ using different models

    拟合结果 Pencil模型 Seah模型 本文改进模型
    RMSE 0.040 0 0.037 3 0.036 9
    R 0.764 3 0.798 7 0.803 7
    下载: 导出CSV

    表  3  不同模型对于Xe+法向轰击SiO2实验数据的拟合

    Table  3.   Fitting of experimental data of SiO2 bombarded at normal incidence by Xe+ using different models

    拟合结果 Pencil模型 Seah模型 本文改进模型
    RMSE 0.029 1 0.034 3 0.023 2
    R 0.635 5 0.410 9 0.788 2
    下载: 导出CSV
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出版历程
  • 收稿日期:  2016-09-18
  • 录用日期:  2016-10-28
  • 网络出版日期:  2017-09-20

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