增强RRAM可靠性的热通量压缩算法

项中元; 张锋

doi:10.13700/j.bh.1001-5965.2015.0336

增强RRAM可靠性的热通量压缩算法

doi: 10.13700/j.bh.1001-5965.2015.0336

项中元,
张锋^,

中国科学院微电子研究所, 北京 100029

基金项目: 国家"863"计划(2011AA010403);国家自然科学基金(61474134)

详细信息

作者简介:
项中元男,硕士研究生。主要研究方向:RRAM外围数字电路设计、高速接口电路设计。E-mail:xiangzhongyuan@ime.ac.cn;张锋男,博士,副研究员。主要研究方向:低功耗存储器设计、高速低功耗接口电路设计。Tel.:010-82995569 E-mail:zhangfeng_ime@ime.ac.cn

通讯作者:
张锋,Tel.:010-82995569 E-mail:zhangfeng_ime@ime.ac.cn

中图分类号: TN492
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出版历程
- 收稿日期: 2015-05-26
- 网络出版日期: 2016-05-20

Thermal flux compression algorithm to enhance RRAM reliability

XIANG Zhongyuan,
ZHANG Feng^,

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

摘要

摘要: 为提高阻变存储器(RRAM)的可靠性,研究了RRAM中的热串扰问题,提出了一种热通量压缩(TFC)算法,通过在RRAM读写电路之前加入TFC算法,降低在RRAM中产生的焦耳热,从而减弱RRAM中的热串扰问题,提高RRAM的可靠性。TFC算法通过分析计算写入数据流产生的真实焦耳热热量进而判断是否对写入数据流进行翻转编码,即TFC算法会在原始写入数据流和翻转编码数据流二者中选择热通量较小者通过算法层,从而达到减小RRAM存储器中焦耳热热量的目的。理论分析和仿真结果表明:以字节为单位数据块条件下TFC算法平均可降低30%以上的写入焦耳热,阻变单元的保持时间估值平均增加了35%以上。
- 阻变存储器(RRAM) /
- 焦耳热 /
- 热串扰 /
- 保持时间 /
- 热通量压缩(TFC)算法
Abstract: A thermal flux compression (TFC) algorithm is proposed through the research on the thermal crosstalk in resistive random access memory (RRAM) to strengthen the RRAM reliability. By adding TFC algorithm before RRAM read-write circuit and reducing Joule heat produced in RRAM, thermal crosstalk in RRAM could be weakened and RRAM reliability could be enhanced. With the analysis and computation of real Joule heat produced in write data flow, TFC algorithm could judge whether to flip data, in order to reduce the Joule heat in RRAM, that is, TFC algorithm would choose the one with lower thermal flux between original write data flow and flipped encode data flow through the algorithm layer. Theoretical analysis and simulation results show that TFC algorithm could reduce more than 30% write Joule heat on average and valuation of resistive unit retention could increase by over 35% on average, with byte as the unite data block.
- resistive random access memory (RRAM) /
- Joule heat /
- thermal crosstalk /
- retention time /
- thermal flux compression (TFC) algorithm

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参考文献(22)

[1]	CHEN Y Y,KOMURA M,DEGRAEVE R,et al.Improvement of data retention in HfO₂/Hf 1T1R RRAM cell under low operating current[C]//2013 IEEE International Electron Devices Meeting (IEDM 2013).Piscataway,NJ:IEEE Press,2013:10.1.1-10.1.4.
[2]	CHEN Y S,LEE H Y,CHEN P S,et al.Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity[C]//2009 IEEE International Electron Devices Meeting (IEDM 2010).Piscataway,NJ:IEEE Press,2010:5.5.1-5.5.4.
[3]	CAGLI C,IELMINI D,NARDI F,et al.Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set,reset,retention and disturb prediction[C]//2008 IEEE International Electron Devices Meeting(IEDM 2008).Piscataway,NJ:IEEE Press,2008:1-4.
[4]	XUE X,JIAN W,YANG J,et al.A 0.13 μm 8 Mb logic-based Cu_xSi_yO ReRAM with self-adaptive operation for yield enhancement and power reduction[J].IEEE Journal of Solid-State Circuits,2013,48(5):1315-1322.
[5]	LARCHER L,PUGLISI F M,PAVAN P,et al.A compact model of program window in HfO_x RRAM devices for conductive filament characteristics analysis[J].IEEE Transactions on Electron Devices,2014,61(8):2668-2673.
[6]	YU S.Overview of resistive switching memory (RRAM) switching mechanism and device modeling[C]//2014 IEEE International Symposium on Circuits & Systems(ISCAS 2014).Piscataway,NJ:IEEE Press,2014:2017-2020.
[7]	JIANG Z,YU S,WU Y,et al.Verilog-A compact model for oxide-based resistive random access memory (RRAM)[C]//International Conference on Simulation of Semiconductor Processes & Devices(SISPAD).Piscataway,NJ:IEEE Press,2014:41-44.
[8]	NARDI F,BALATTI S,LARENTIS S,et al.Complementary switching in oxide-based bipolar resistive-switching random memory[J].IEEE Transactions on Electron Devices,2013,60(1):70-77.
[9]	IELMINI D,NARDI F,BALATTI S.Evidence for voltage-driven set/reset processes in bipolar switching RRAM[J].IEEE Transactions on Electron Devices,2012,59(8):2049-2056.
[10]	NARDI F,LARENTIS S,BALATTI S,et al.Resistive switching by voltage-driven ion migration in bipolar RRAM-Part I:Experimental study[J].IEEE Transactions on Electron Devices,2012,59(9):2461-2467.
[11]	LARENTIS S,NARDI F,BALATTI S,et al.Resistive switching by voltage-driven ion migration in bipolar RRAM-Part II:Modeling[J].IEEE Transactions on Electron Devices,2012,59(9):2468-2475.
[12]	CHEN Z,HUANG P,LI H T,et al.Optimization of uniformity in resistive switching memory by reducing thermal effect[C]//201412th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).Piscataway,NJ:IEEE Press,2014:1-3.
[13]	LIU H T,LV H B,YANG B H,et al.Uniformity improvement in 1T1R RRAM with gate voltage ramp programming[J].IEEE Electron Device Letters,2014,35(12):1224-1226.
[14]	YALON E,RIESS I,RITTER D.Heat dissipation in resistive switching devices:Comparison of thermal simulations and experimental results[J].IEEE Transactions on Electron Devices,2014,61(4):1137-1144.
[15]	NINOMIYA T,MURAOKA S,WEI Z,et al.Improvement of data retention during long-term use by suppressing conductive filament expansion in TaO_x bipolar-ReRAM[J].IEEE Electron Device Letters,2013,34(6):762-764.
[16]	RUSSO U,IELMINI D,CAGLI C,et al.Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices[J].IEEE Transactions on Electron Devices,2009,56(2):193-200.
[17]	LI H T,CHEN H Y,CHEN Z,et al.Write disturb analyses on half-selected cells of cross-point RRAM arrays[C]//2014 IEEE International Reliability Physics Symposium(IRPS 2014).Piscataway,NJ:IEEE Press,2014:MY.3.1-MY.3.4.
[18]	ZULOAGA S,LIU R,CHEN P Y,et al.Scaling 2-layer RRAM cross-point array towards 10 nm node:A device-circuit co-design[C]//2015 IEEE International Symposium on Circuits and Systems (ISCAS 2015).Piscataway,NJ:IEEE Press,2015:193-196.
[19]	LI Y,CHEN W,LU W,et al.Impact of coupling capacitance on read operation of RRAM devices in 1D1R crossbar architectures[C]//2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS 2014).Piscataway,NJ:IEEE Press,2014:989-992.
[20]	GAO B,KANG J F,ZHANG H W,et al.Oxide-based RRAM:Physical based retention projection[C]//2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC 2010).Piscataway,NJ:IEEE Press,2010:392-395.
[21]	ZHANG L,HUANG R,HSU Y Y,et al.Statistical analysis of retention behavior and lifetime prediction of HfOB_x-based RRAM[C]//2011 IEEE International Reliability Physics Symposium (IRPS 2011).Piscataway,NJ:IEEE Press,2011:MY.8.1-MY.8.5.
[22]	KIM S Y,BAEK J M,SEO D J,et al.Power-efficient fast write and hidden refresh of ReRAM using an ADC-based sense amplifier[J].IEEE Transactions on Circuits and Systems II:Express Briefs,2013,60(11):776-780.