| Citation: | YU Zhaolong, GE Hongjuan, LI Shang, et al. Mechanism of voltage spike production during switching transients and its suppression methods in Boost converter[J]. Journal of Beijing University of Aeronautics and Astronautics, 2020, 46(1): 198-209. doi: 10.13700/j.bh.1001-5965.2019.0154(in Chinese)
|
Boost converter is often used as the pre-stage circuit in double-stage inverter. Because of the existence of parasitic parameters in the circuit, the output voltage will be superimposed with transient spikes, which reduces the waveform quality and even affects the operation of inverter. In order to suppress the voltage spikes, the switching transient of Boost converter is studied. Aimed at the switching characteristics of transient circuit and the operation status of switching devices, an analytical model of commutation unit based on metal-oxide-semiconductor field-effect transistor (MOSFET) and Schottky barrier diode (SBD) is established, and the influence of parasitic parameters on the current characteristics during switching transient, as well as the mechanism of causing voltage spikes, is analyzed. The relationships between the parasitic parameters and the output voltage spikes are analyzed and compared by simulation, and two methods are proposed to suppress the output voltage spikes, which are "slowing down the switching speed" and "reducing the output terminal parasitic inductance". The validity of these two methods to reduce voltage spikes and improve output voltage performance of Boost converters has been verified by simulation and experiments.
| [1] |
WANG J, JI B, LU X, et al.Steady-state and dynamic input current low-frequency ripple evaluation and reduction in two-stage single-phase inverters with back current gain model[J].IEEE Transactions on Power Electronics, 2014, 29(8):4247-4260. doi: 10.1109/TPEL.2013.2292609
|
| [2] |
杜青, 崔波, 夏宁, 等.一种新型大功率升降压变换器及控制方法[J].北京航空航天大学学报, 2017, 43(3):472-480. doi: 10.13700/j.bh.1001-5965.2016.0225
DU Q, CUI B, XIA N, et al.A novel high-power step-up/step-down converter and control methods[J].Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(3):472-480(in Chinese). doi: 10.13700/j.bh.1001-5965.2016.0225
|
| [3] |
张厚升, 赵艳雷.单相双级式光伏并网逆变器[J].电力自动化设备, 2010, 30(8):95-99. doi: 10.3969/j.issn.1006-6047.2010.08.020
ZHANG H S, ZHAO Y L.Single-phase double-stage photovoltaic grid-connected inverter[J].Electric Power Automation Equipment, 2010, 30(8):95-99(in Chinese). doi: 10.3969/j.issn.1006-6047.2010.08.020
|
| [4] |
TIAN Y, YANG X, XIE R, et al.A passive component based gate drive scheme for negative gate voltage spike mitigation in a sic-based dual-active bridge[C]//2018 IEEE Energy Conversion Congress and Exposition (ECCE).Piscataway, NJ: IEEE Press, 2018: 1841-1845.
|
| [5] |
WU Q, WANG Q, XIAO L, et al.One adaptive turn-off method for PFC converter with voltage spike limitation[C]//2016 IEEE Applied Power Electronics Conference and Exposition (APEC).Piscataway, NJ: IEEE Press, 2016: 1657-1662. https://www.researchgate.net/publication/303513910_One_adaptive_turn-off_method_for_PFC_converter_with_voltage_spike_limitation
|
| [6] |
PATEL H K.Voltage transient spikes suppression in flyback converter using dissipative voltage snubbers[C]//2008 3rd IEEE Conference on Industrial Electronics and Applications. Piscataway, NJ: IEEE Press, 2008: 897-901. 224321871_Voltage_transient_spikes_suppression_in_flyback_converter_using_dissipative_voltage_snubbers
|
| [7] |
WANG J, CHUNG S H, LI T H.Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance[J].IEEE Transactions on Power Electronics, 2012, 28(1):573-590. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=05e0f54b81a849afa495060dad80a100
|
| [8] |
CASTRO I, ROIG J, GELAGAEV R, et al. Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC-DC power converters[J].IEEE Transactions on Power Electronics, 2016, 31(3):2485-2495. doi: 10.1109/TPEL.2015.2433017
|
| [9] |
CHEN Z, BOROYEVICH D, BURGOS R.Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics[C]//2010 International Power Electronics Conference(ECCE).Piscataway, NJ: IEEE Press, 2010: 164-169. 224165533_Experimental_parametric_study_of_the_parasitic_inductance_influence_on_MOSFET_switching_characteristics
|
| [10] |
朱义诚, 赵争鸣, 王旭东, 等.SiC MOSFET与SiC SBD换流单元瞬态模型[J].电工技术学报, 2017, 32(12):58-69. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=dgjsxb201712009
ZHU Y C, ZHAO Z M, WANG X D, et al.Analytical transient model of commutation units with SiC MOSFET and SiC SBD pair[J].Transactions of China Electrotechnical Society, 2017, 32(12):58-69(in Chinese). http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=dgjsxb201712009
|
| [11] |
CUI T, MA Q, XU P, et al.Analysis and optimization of power MOSFETs shaped switching transients for reduced EMI generation[J].IEEE Access, 2017, 5(1):20440-20448. http://cn.bing.com/academic/profile?id=7713a0c8808a24b764d8aa817fedc4ef&encoded=0&v=paper_preview&mkt=zh-cn
|
| [12] |
ENGELMANN G, SENONER T, DONCKER R W D.Experimental investigation on the transient switching behavior of SiC MOSFETs using a stage-wise gate driver[J].CPSS Transactions on Power Electronics and Applications, 2018, 3(1):77-87. doi: 10.24295/CPSSTPEA.2018.00008
|
| [13] |
罗剑波, 范伟, 彭凯.SiC MOSFET模块高频吸收电路研究[J].大功率变流技术, 2016, 5(1):23-30. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=dglbljs201605006
LUO J B, FAN W, PENG K.High frequency snubber circuit for SiC MOSFET module[J].High Power Converter Technology, 2016, 5(1):23-30(in Chinese). http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=dglbljs201605006
|
| [14] |
柯俊吉, 赵志斌, 魏昌俊, 等.寄生电感对碳化硅MOSFET开关特性的影响[J].半导体技术, 2017, 42(3):194-199. http://d.old.wanfangdata.com.cn/Periodical/bdtjs201703007
KE J J, ZHAO Z B, WEI C J, et al.Effect of the parasitic inductance on SiC MOSFET switching characteristics[J].Semiconductor Devices, 2017, 42(3):194-199(in Chinese). http://d.old.wanfangdata.com.cn/Periodical/bdtjs201703007
|
| [15] |
秦海鸿, 张英, 朱梓悦, 等.寄生电容对SiC MOSFET开关特性的影响[J].中国科技论文, 2017, 12(23):2708-2714. doi: 10.3969/j.issn.2095-2783.2017.23.012
QIN H H, ZHANG Y, ZHU Z Y, et al.Influence of parasitic capacitance on switching characteristics of SIC MOSFET[J].China Sciencepaper, 2017, 12(23):2708-2714(in Chinese). doi: 10.3969/j.issn.2095-2783.2017.23.012
|
| [16] |
CHEN K, ZHAO Z, YUAN L, et al.The impact of nonlinear junction capacitance on switching transient and its modeling for SiC MOSFET[J].IEEE Transactions on Electron Devices, 2015, 62(2):333-338. doi: 10.1109/TED.2014.2362657
|
Figures(19) / Tables(1)
Copyright © Journal of Beijing University of Aeronautics and Astronautics
Address: Editorial Department of Journal of Beijing University of Aeronautics and Astronautics, 37 Xueyuan Road, Haidian District, Beijing Post Code: 100191 Email: jbuaa@buaa.edu.cn
Supported by:
Beijing Renhe Information Technology Co., Ltd.
DownLoad:
