| Citation: | FU Xiaojuan, ZHAO Yiqiang, LIU Jun, et al. Optimization of diffusion barrier process on copper interconnection[J]. Journal of Beijing University of Aeronautics and Astronautics, 2020, 46(8): 1514-1520. doi: 10.13700/j.bh.1001-5965.2019.0493(in Chinese)
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Facing the problems about low breakdown voltage and poor reliability of the metal interconnection, the copper diffusion barrier including the thickness of the tantalum barrier and the quality of silicon nitride barrier film was studied and optimized. The Self-Aligned Double Pattern (SADP) method can reduce the critical dimension of metal interconnection and cut down the thickness expectation of the interconnection wire diffusion barrier. In this paper, the resistance and breakdown voltage of metal interconnetion system are compared and analyzed in detail by preparation of tantalum barriers with different thickness. It is found that the hard tantalum material has an impact on Chemical Mechanical Polish (CMP). As the thickness of tantalum decreases, the resistance and breakdown voltage of the interconnection system will increase, and the over-thin barrier will degrade the performance of the barrier and make the uniformity of the whole wafer worse. Meanwhile, the presence of oxygen at the copper wire interface can greatly reduce the adhesion of silicon nitride, which degrades the performance of the silicon nitride barrier. In this experiment, the adhesion of silicon nitride is analyzed by feeding different flow rates of ammonia during the ammonia treatment stage, changing the pre-deposition time and increasing the transition stage in the pre-deposition stage. Experiments show that the adhesion of silicon nitride can be improved with the increase of ammonia flow rate, the decrease of pre-deposition time and the addition of the transition stage, and the blocking ability of film is improved.
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