Citation: | Li Jihong, Jia Ying, Kang Rui, et al. Study of transistor steady-state operation life test by method of controllable junction temperature[J]. Journal of Beijing University of Aeronautics and Astronautics, 2005, 31(06): 696-699. (in Chinese) |
[1] MIL-STD-750D,半导体器件试验方法[S].1995 MIL-STD-750D,Test methods for semiconductor[S].1995(in Chinese) [2] GJB33A-97,半导体器件总规范[S].1997 GJB33A-97,General requirements for semiconductor diceces[S].1997(in Chinese) [3] GJB128A-97,半导体分立器件试验方法[S].1997 GJB128A-97,Test methods for semiconductor discrete devices[S].1997(in Chinese) [4] 卢其庆,张安康.半导体器件可靠性与失效分析[M]. 江苏:江苏科学技术出版社,1981 Lu Qiqing,Zhang Ankang. Dependency and failure analyse for semiconductor devices[M].Jiangsu:Jiangsu Science and Technique Press,1981(in Chinese) [5] 刘 永,张福海.晶体管原理[M].北京:国防工业出版社,2002 Liu Yong,Zhang Fuhai. Transistor principle[M].Beijing:Defence Industry Press,2002 (in Chinese) [6] 施 敏.现代半导体器件物理[M].北京:科学出版社,2001.11~26 Shi Min. Modern semiconductor device physics[M].Beijing:Science Press,2001.11~26(in Chinese) [7] Dale E Dawson, Aditya K Gupta. Measurement of HBT thermal resistance[J]. IEEE Trances Action on Electron Devices,1992,39(10):2235~2239 [8] Fields C H,Foschaar J,Thomas S. Thermal resistance characterization of 200 GHz F InGaAs/InAlAs HBTs. IPRM.14th. 2002.79~82 [9] Webb P W. Measurement of thermal resistance using electrical methods[J].IEE Proceeding,1987,34(2):51~56 [10] Chan-Su Yun,Peter Regli.Static and dynamic thermal characteristics of IGBT power modules. Power Semiconductor Devices and Ics. ISPSD'99 Proceeding,the 11th International Symposim on. 1999.37~40
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