Volume 31 Issue 06
Jun.  2005
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Li Jihong, Jia Ying, Kang Rui, et al. Study of transistor steady-state operation life test by method of controllable junction temperature[J]. Journal of Beijing University of Aeronautics and Astronautics, 2005, 31(06): 696-699. (in Chinese)
Citation: Li Jihong, Jia Ying, Kang Rui, et al. Study of transistor steady-state operation life test by method of controllable junction temperature[J]. Journal of Beijing University of Aeronautics and Astronautics, 2005, 31(06): 696-699. (in Chinese)

Study of transistor steady-state operation life test by method of controllable junction temperature

  • Received Date: 27 Feb 2004
  • Publish Date: 30 Jun 2005
  • Analyzing the various problems of current steady-state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results. To increase the accuracy of the test method, a steady-state operation life test method with additional measuring and strictly controlling transistor junction temperature, in the highest temperature range, is given. Bipolar transistors of the type of 3DD820 and 3DD15D (with F2 metal-pack) are taken as an example in the study to verify the method of controllable junction temperature. Analyzing result of simulated experiment data shows that the test method can increase availably the accuracy of the transistor steady-state operation life test method.

     

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