Study of transition metal silicides thin film epitaxial growth on silicon substrate

[1] Bost M C, Mahan J E. Optical properties of semiconducting iron disilicide thin film [J]. J Appl Phys, 1985, 58(7):2696~2703 [2] Zhang L, Ivey D G. Low temperature reaction of thin layers of Mn with Si [J]. J Mater Res, 1991, 6(7):1518~1531 [3] Wang J L, Hirai M, Kusaka M, et al. Valence band density of states of the manganese silicides studied by soft X-ray emission spectroscopy [J]. J Phys Soc Jpn, 1998, 67(1):230~233 [4] Wang J L, Hirai M, Kusaka M, et al. Mn(thin-film)/Si(substrate) contacts:analysis of the buried interface by soft X-ray emission spectroscopy[J]. Jpn J Appl Phys, 1999, 38:198~200 [5] Wang J L, Wang Tianmin. Transition metal (thin film)/Si(substrate) contacts:buried interface study by soft X-ray emission spectroscopy [J]. Material Science and Engineering B, 2000, 72:156~159 [6] 韩永召,李炳宗,茹国平,等. SiO_x调制的三元硅化物(Co_1-xNi)Si₂外延[J]. 半导体学报,2001,22(10):1269~1273 Han Yongzhao, Li Bingzong, Ru Guoping, et al. SiO_x mediated epitaxial ternary silicide (Co_1-xNi)Si₂[J]. Chinese Journal of Semiconductors, 2001,22(10):1269~1273(in Chinese) [7] 杨君玲,陈诺夫,刘志凯,等. 离子束外延生长半导体性锰硅化合物[J]. 半导体学报,2001,22(11):1429~1433 Yang Junling, Chen Nuofu, Liu Zhikai, et al. The growth of semiconductive manganese silicide by ion beam epitaxy[J]. Chinese Journal of Semiconductors, 2001,22(11):1429~1433(in Chinese) [8] 李晓娜,聂 冬,董 闯,等. C掺杂对离子注入合成β-FeSi₂薄膜的影响[J]. 半导体学报,2001,22(12):1507~1515 Li Xiaona, Nie Dong, Dong Chuang, et al. Influences of carbon doping on β-FeSi2 film synthesized by ion implantation[J]. Chinese Journal of Semiconductors, 2001,22(12):1507~1515(in Chinese) [9] Iwami M, Hirai M, Kusaka M, et al. Construction of soft X-ray emission spectroscopy (SXES) apparatus and its application for study of electronic and atomic structures of a multiplayer system[J]. Jpn J Appl Phys, 1990, 29(7):1353~1355 [10] Wang J L, Hirai M, Kusaka M, et al. Preparation of manganese silicide thin film by solid phase reaction[J] pplied Surface Science, 1997, 113/114:53~56