Volume 28 Issue 5
May  2002
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YU Xiao-mei, WANG Jin-liang, JIANG Xing-liu, et al. Structure Characteristics of PhosphorusDoped Hydrogenated NanoCrystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(5): 547-549. (in Chinese)
Citation: YU Xiao-mei, WANG Jin-liang, JIANG Xing-liu, et al. Structure Characteristics of PhosphorusDoped Hydrogenated NanoCrystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(5): 547-549. (in Chinese)

Structure Characteristics of PhosphorusDoped Hydrogenated NanoCrystalline Silicon Films

  • Received Date: 16 Jan 2001
  • Publish Date: 31 May 2002
  • By Raman spectroscopy, high-resolution electron microscope and atomic force microscope, the structure of phosphorus-doped hydrogenated nano-crystalline silicon films (nc-Si (P)∶H) was analyzed The films possess orderly arranged cluster feature in the size of 15~20nm. The films are composed of nano-crystalline grain and amorphous silicon, the crystalline volume fraction of the films is 40%~55%, the average grain size is between 2 and 4 nm. The grain size, the crystalline volume fraction and the conductivity of the nc-Si (P)∶H increase as the doping concentration is increased. Compared with undoped hydrogenated nano-crystalline silicon films, the conductivity of nc-Si(P)∶H is increased almost 2 orders. Possible connection between the ordered cluster characteristics and the higher conductivity was finally appointed.

     

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