Citation: | YU Xiao-mei, WANG Jin-liang, JIANG Xing-liu, et al. Structure Characteristics of PhosphorusDoped Hydrogenated NanoCrystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(5): 547-549. (in Chinese) |
[1] He Yuliang, Chu Yiming, Lin Hongyi, et al. Microstructure and electron conduction mechanism of hydrogenated nano-crystalline silicon films[J]. Chinese Phys Lett,1993,10(9):539~542. [2]Rückschloss M, Landkammer M, Vep ek S. Light emitting nanocrystalline silicon prepared by dry processing[J]. Appl Phys Lett,1993,63(11):1474~1476. [3]Zhao X, Schoenfeld O, Aoyagi Y, et al. Violet luminescence from anodized microcrystalline silicon[J]. Appl Phys Lett, 1994,65(10):1290~1292. [4]何宇亮,刘湘娜,王志超,等. 纳米硅薄膜的研制[J]. 中国科学,1992(9):995~1001. [5]He Yuliang, Yin Chengzhong, Cheng Guangxu, et al. The structure and properties of nanosize crystalline silicon films[J]. J Appl Phys,1994,75(2):797~803. [6]余明斌,何宇亮,刘洪涛,等. 纳米硅薄膜的退火特性[J]. 物理学报,1995,44(4):634~639. [7]刘 明,余明斌,何宇亮,等.纳米硅二极管的输运特性[J]. 电子学报,1997,25(11):72~74. [8]Richter H, Ley L. Optical proterties and transport in microcrystalline silicon prepared at temperature below 400℃[J]. J Appl Phys,1981,52(12):7281~7286. [9]刘 明,王子欧,奚中和,等. 磷掺杂纳米硅薄膜的研制[J].物理学报,2000,49(5):983~988. [10] 彭英才, 刘 明, 何宇亮. 掺杂nc-Si∶H膜的电导特性[J]. 半导体学报,2000,21(3):308~312. [11]刘 明. 纳米硅薄膜的微结构、光学及电学特性研究. 北京:北京航空航天大学材料科学与工程系,1998.
|