Citation: | WANG Jin-liang, XU Gang-yi, WANG Tian-minet al. Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(2): 181-185. (in Chinese) |
[1]Tanaka K, Yoko T, Atarash M, et al. Preparation of Fe3O4 thin film by the sol-gel method and its magnetic properties[J].J Mater Sci Lett, 1989,(8):83~85. [2]Hodes G, Engelheard T. Abstract proceedings of MRS[M]. North-Holland:MRS,1991. [3]何宇亮,刘湘娜,王志超,等. 纳米硅薄膜的研制[J]. 中国科学(A辑), 1992,(9):995~1001. [4]He Yuliang, Liu Xiangna, Wang Zhichao,et al. Study of nanocrystalline Silicon films[J].Science in China Series A, 1993,36(2):248~ 256. [5]蒋翔六,何宇亮,朱洪亮. 在微晶硅薄膜中替代式硼杂质的非受主态行为[J]. 半导体学报, 1993,14(11):664~669. [6]Jiang X L, He Y L, Zhu H L. The effect of passivation of boron dopant by hydrogen in nano-crystalline and micro-crystalline silicon films[J]. J Phys:Condens Matter, 1994,(6):713~718. [7]王忠怀,戴长春,张平成,等.纳米硅薄膜的扫描隧道显微镜研究[J]. 科学通报,1993,38(21):1953~1955. [8]Spear W E, Le Conber P G. Substitutional doping of amorphous silicon[J]. Solid State Commun, 1975,(17):1193~1196. [9]何宇亮,余明斌,吕燕武,等. 纳米硅薄膜中的量子点特征[J]. 自然科学进展, 1996,6(6):700~704. [10]治明. 非晶半导体材料与器件[M].北京:科学出版社,1991.
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