Volume 28 Issue 2
Feb.  2002
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WANG Jin-liang, XU Gang-yi, WANG Tian-minet al. Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(2): 181-185. (in Chinese)
Citation: WANG Jin-liang, XU Gang-yi, WANG Tian-minet al. Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 2002, 28(2): 181-185. (in Chinese)

Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films

  • Received Date: 28 Jun 2000
  • Publish Date: 28 Feb 2002
  • B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD). Effects of technique parameters on the microstructure and physical properties of the films were examined. The microstructure of the nc-Si:H films were studied by means of high resolution electron microscopy (HREM) and Raman scattering. The growth characteristics of doped nc-Si:H films were discussed based on theory and experiments. It was conclude that both the growth and the doping mechanism of doped nc-Si:H films are different form those of μc-Si:H and a-Si:H. In the growing process of nc-Si:H films, most of the inclusion atoms are inactive and present at grain boundarics.

     

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