Fabrication of SIMOS/SOI CMOS IC-s

SOI-SIMOX(Silicon On Insulator-Separation by Implanted Oxygen) materials were formed by large dose(1.5×10¹⁸/cm²) oxygen ion implantation into p-type (100) Si wafers at energy of 170keV and annealing in nitrogen at 1300℃ for 6 h.The carriers in the top silicon layers of the SIMOX are reversed from P-type into N-type.The reversion is resulted from the residual oxygen atoms in the top Si layers,which play the role of donors and over-compensate the acceptors in the virgin p-type Si.The oxygen donor ionization energy is 0.15eV.The MOSFET-s and CMOS triple 3-input NAND gate circuits(CC4023) were fabricated on SIMOS/SOI materials.The CMOS/SIMOX process is briefly introduced.