Citation: | Qi Xianglin, Cheng Xianan, Song Ruan, et al. Resistance Relexation of NiSiB Amorphous Films[J]. Journal of Beijing University of Aeronautics and Astronautics, 1998, 24(1): 108-111. (in Chinese) |
1. Fukmichi K,Kimura H M,Masumoto T.Strain gauge characteristics of Ni base amorphous alloys.IEEE Transaction on Magnetics,1980,16(5):907~909 2. 程先安,陈秉玉,姚慈顺.压力敏感元件新材料的实验研究.北京航空学院学报,1984(1):1~6 3. Cheng X,Gu G,Chen B.Electrical resistance strain characteristics and structure of amorphous NiSiB thin films.SPIE,1991,1519(part one):33~36 4. Kuhrast F A,Machizaud F,Flechon J,et al.Electrical conductivity of amorphous Ni-{66.} B-{34.} film.Thin Solid Film,1981,81:181~186 5. Nagel R.Temperature dependence of the resistivity in metallic glasses.Physical Review B,1977,16(4):1694~1698 6. Gibbs M R J,Evetts J E,Leake J A.Activation energy spectra and relaxation in amorphous materials.Journal of Materials Science,1983,18:278~288
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