Volume 36 Issue 12
Dec.  2010
Turn off MathJax
Article Contents
Fan Guoli, Jiang Yuesong. Schottky diodes mixing performance evaluation in terahertz band[J]. Journal of Beijing University of Aeronautics and Astronautics, 2010, 36(12): 1440-1443. (in Chinese)
Citation: Fan Guoli, Jiang Yuesong. Schottky diodes mixing performance evaluation in terahertz band[J]. Journal of Beijing University of Aeronautics and Astronautics, 2010, 36(12): 1440-1443. (in Chinese)

Schottky diodes mixing performance evaluation in terahertz band

  • Received Date: 06 Nov 2009
  • Publish Date: 30 Dec 2010
  • Schottky diodes mixing performance can decrease as high-frequency effects in terahertz band. The finite difference technique was used to calculate the electromagnetic field within the diode chip and the influence of high-frequency effects on mixing performance was analyzed from the shunting of the junction capacitance, the skin effect, the plasma resonance effect and velocity saturation effect, respectively. Finally, the structure parameters were optimized when the cut-off frequency as the figure of merit. Simulation results show that diode mixing performance can be improved by reducing the anode diameter and the epilayer thickness, and increasing the epilayer doping density, and will benefit the development of the high frequency mixing diodes.

     

  • loading
  • [1] Gulkis S,Allen M,Backus C,et al.Remote sensing of a comet at millimeter and submillimeter wavelengths from an orbiting spacecraft[J].Planetary and Space Science.2007,55(9): 1050-1057 [2] Jacobs E,Moyer S,Franck C,et al.Concealed weapon identification using terahertz imaging sensors // Terahertz for Military and Security Applications Iv 2006.Orlando (Kissimmee),FL,USA: SPIE,2006:6210J-62110 [3] Hubers H W.Terahertz heterodyne receivers[J].IEEE Journal of Selected Topics in Quantum Electronics,2008,12(2): 378-391 [4] Crowe T W,Mattauch R J,Roser H P,et al.GaAs Schottky diodes for THz mixing applications // Proceeding of the IEEE. :Institute of Electrical and Electronics Engineers,Inc,1992:1827-1814 [5] Siles J V,Grajal J,Krozer V,et al.Schottky diode-based mixers design and optimization at millimetre and submillimetre-wave bands // Microwave Conference.Madrid,Spain:ETSI Telecomunication,2005:1753-1756 [6] Dickens L E.Spreading resistance as a function of frequency[J].Microwave Theory and Techniques,IEEE Transactions on,1967,15(2): 101-109 [7] Bozhkov V G.Semiconductor detectors,mixers,and frequency multipliers for the terahertz band[J].Radiophysics and Quantum Electronics,2003,46(8):631-656 [8] William C B,Peatman T W C.Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise terahertz receiver applications //Cornell Conference on Advanced Concepts in.Ithaca,NY,USA:IEEE,1989: 390-398 [9] Cojocari O,Sydlo C,Hartnagel H,et al.Schottky-structures for THz-applications based on quasi-vertical design-concept // 16th International Symposium on Space Terahertz Technology.Gteborg,Sweden:ISSTT,2005:490-495
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Article Metrics

    Article views(3367) PDF downloads(1532) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return