Volume 35 Issue 7
Jul.  2009
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Su Yingxia, Wang Kai, Zhan Maoshenget al. Synthesis and atomic oxygen resistance of phosphorus-containing polyimide[J]. Journal of Beijing University of Aeronautics and Astronautics, 2009, 35(7): 807-811. (in Chinese)
Citation: Su Yingxia, Wang Kai, Zhan Maoshenget al. Synthesis and atomic oxygen resistance of phosphorus-containing polyimide[J]. Journal of Beijing University of Aeronautics and Astronautics, 2009, 35(7): 807-811. (in Chinese)

Synthesis and atomic oxygen resistance of phosphorus-containing polyimide

  • Received Date: 04 Jun 2008
  • Publish Date: 31 Jul 2009
  • A series of phosphorus-containing polyimide films were synthesized by a self made phosphorus-containing diamine, bis( m -aminophenyl)phenylphosphine oxide (DAPPO). The atomic oxygen (AO) resistance testes of films were carried out using a ground-based atomic oxygen effects simulation facility of Beijing University of Aeronautics and Astronautics. The effects of phosphorus content on the morphology and structure evolvement of polyimide films were investigated using a field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectrometer (XPS) respectively. The results indicate that the Kapton and Upliex-R films were seriously damaged and formed lots of hill structure, but a phosphorus-rich layer was formed on the film based on the DAPPO after AO exposure, which decreased the erosion rate and obviously improved the AO resistance of the phosphorus-containing polyimide films, when the DAPPO content was 5.47% by weight, the erosion rate of phosphorus-containing polyimide film after 20 hour-AO exposure was only 13% and 20% of the Kapton and Upliex-R films.

     

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