Volume 32 Issue 08
Aug.  2006
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Wang Xin, Zhao Xiaohu, Shen Zhiganget al. Improving the atomic oxygen resistance of epoxy resin using organosilicon[J]. Journal of Beijing University of Aeronautics and Astronautics, 2006, 32(08): 912-916. (in Chinese)
Citation: Wang Xin, Zhao Xiaohu, Shen Zhiganget al. Improving the atomic oxygen resistance of epoxy resin using organosilicon[J]. Journal of Beijing University of Aeronautics and Astronautics, 2006, 32(08): 912-916. (in Chinese)

Improving the atomic oxygen resistance of epoxy resin using organosilicon

  • Received Date: 23 Sep 2005
  • Publish Date: 31 Aug 2006
  • To improve the atomic oxygen(AO) erosion resistance of resin matrix materials applied to spacecrafts, γ-Glycidoxypropyltrimethoxy silane was filledin the epoxy resin with a direct-mixing method and then the AO exposure experiments were carried out. After the AO exposure, a three-dimension network structure was formed on the sample surfaces. This network structure protected the underlying materials from the AO erosion and the AO resistance of the polymer was improved remarkably; the mass loss and erosion yield decreased distinctly. It proves that filling the organosilicon in the epoxy resin is an effective method to improve AO resistance of the epoxy resin. After AO exposure for 50 h, the erosion yield of the polymer containing 25.0% organosilicon decreased to 25% of that of the pristine epoxy resin.

     

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