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Citation: Xiao Weihao, Zhang Liang, Jiang Huirenet al. Effects of Si on high temperature oxidation resistance of TiAl alloy[J]. Journal of Beijing University of Aeronautics and Astronautics, 2006, 32(03): 365-368. (in Chinese)

Effects of Si on high temperature oxidation resistance of TiAl alloy

  • Received Date: 24 Jun 2005
  • Publish Date: 31 Mar 2006
  • The isothermal oxidation of TiAl-Si(atom percent is 0~20%) alloys at 1 173 K, 24 hours on atmosphere were studied by X-ray diffraction,scanning electron microscopy and energy dispersive spectrum. The results reveals that the addition of Si improves the oxidation resistance of TiAl alloys. With increasing of Si content, the thickness of oxidation films and TiO2 content are decreasing, and the content of Al2O3 is increasing. when the addition of Si reaches 10%, the continuous and compacted oxide film of Al2O3 is preferentially formed on the surface of TiAl alloy. During the addition of Si content from 0 to 20%, no any form of oxide of Si appears. The main reason of the improvement of oxidation resistance is attribute to Si combination with Ti, which results in the decrease of the activity of Ti, baffles Ti-ions outward diffusion, therefore relatively enhances the activity of Al, and the compacted oxide film of Al2O3 is preferentially formed on the surface of TiAl alloy.

     

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