| Citation: | WANG Jian, YU Fang, ZHAO Kai, et al. Comparison of power consumption and circuit performance between back bias in FDSOI and body bias in bulk silicon[J]. Journal of Beijing University of Aeronautics and Astronautics, 2018, 44(11): 2430-2436. doi: 10.13700/j.bh.1001-5965.2018.0142(in Chinese)
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In this paper, the body bias circuit in 28 nm bulk and the back bias circuit in 22 nm FDSOI are analyzed and compared from two aspects:power consumption and circuit performance. Taking a 65-stage ring oscillator (RO) with 4-level frequency divider as an example, post simulation was conducted. The simulatior results show that, for 22 nm FDSOI RO using the back bias technology, the output frequency can be adjusted from 57.8 MHz to 206 MHz, with the corresponding operating current varing from 24.4 μA to 90.4 μA, while for 28 nm bulk silicon RO using the body bias technology, the output frequency can be modulated from 92.8 MHz to 127 MHz, with the corresponding operating current varing from 67.8 μA to 129 μA. The 22 nm FDSOI process RO was measured and the measured results are consistent with the simulation results. Therefore, from the view of both power consumption and performance, the adjustment ability of 22 nm FDSOI circuits with back bias is much more efficient than that of 28 nm bulk circuits with body bias.
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