| Citation: | SHANGGUAN Shipeng, ZHU Xiang, CHEN Rui, et al. Single event transient pulse width transmission of 0.13 μm partial depleted SOI process DFF[J]. Journal of Beijing University of Aeronautics and Astronautics, 2019, 45(11): 2193-2198. doi: 10.13700/j.bh.1001-5965.2019.0076(in Chinese)
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Based on 0.13 μm partial depleted silicon-on-insulator (PD-SOI) process, a delay flip-flop (DFF) has been designed for single event transient (SET) pulse width, with the pulse width test range between 105 ps to 3 150 ps and the precision being ±52.5 ps. The DFF has been tested by heavy ion accelerator and pulsed laser single event effect facility. 86Kr ion with linear energy transfer (LET) equal 37.6 MeV·cm2/mg was chosen to obtain a DFF 3 level SET pulse width, and pulsed laser triggered the same pulse width by front-side testing. By using 5 500 pJ laser energy, the bipolar amplification of DFF has been triggered, and the pulse width is amplified by 32.3%. According to the same SET pulse width, a method for estimating the pulsed laser energy reaching to the active area of chips which is also called effective energy is established. Meanwhile, based on the experimental results, the relationship between effective energy and LET was also established, and the deviations between the two methods were also analyzed. Other kinds of chips can also use this method to establish the relationship between laser energy and LET.
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