北京航空航天大学学报 ›› 2017, Vol. 43 ›› Issue (9): 1766-1772.doi: 10.13700/j.bh.1001-5965.2016.0744

• 论文 • 上一篇    下一篇

低能Ar+、Xe+轰击SiO2的溅射模型

张建华, 夏勇, 丁利, 商圣飞   

  1. 北京航空航天大学 宇航学院, 北京 100083
  • 收稿日期:2016-09-18 出版日期:2017-09-20 发布日期:2016-12-13
  • 通讯作者: 张建华,E-mail:zjh@buaa.edu.cn E-mail:zjh@buaa.edu.cn
  • 作者简介:张建华,男,博士,副研究员;主要研究方向:航空宇航推进理论与技术、稀薄气体动力学、火箭发动机流场计算及测试

Sputtering model of SiO2 for low energy Ar+ and Xe+ bombardment

ZHANG Jianhua, XIA Yong, DING Li, SHANG Shengfei   

  1. School of Astronautics, Beijing University of Aeronautics and Astronautics, Beijing 100083, China
  • Received:2016-09-18 Online:2017-09-20 Published:2016-12-13

摘要: 为了得到在低能条件下更为精确的Ar+和Xe+轰击SiO2的溅射模型,对已有化合物溅射模型进行调研分析,总结了3种溅射模型,分别为Pencil模型、Bach模型和Seah模型,并对其不足之处加以分析。在Seah模型基础上,对溅射阈值采用新的计算方法,并利用等效原子法改进溅射参数和表面键能的计算方法,形成改进后的新模型。结合已有的关于Ar+和Xe+法向轰击SiO2的实验数据,对4种模型的计算结果进行对比分析。对于Ar+和Xe+法向轰击SiO2,改进后的溅射模型的均方根误差最小,拟合优度最高,均优于其他3种模型。说明在低能状态下,采用改进后的模型可以更为精确地计算Ar+和Xe+轰击SiO2的溅射率。

关键词: 氩离子, 氙离子, 二氧化硅, 溅射, 改进

Abstract: In order to obtain the more accurate sputtering model of SiO2 for bombardment with low energy Ar+ and Xe+, three existing models, Pencil model, Bach model and Seah model, were investigated and the deficiencies were analyzed. On the basis of Seah model, the sputtering parameters and surface binding energy were calculated by equivalent atomic method. Meanwhile, a new calculation method of sputtering threshold was applied to form a new advanced model. Combined with the experimental data of SiO2 for bombardment at normal incidence with Ar+ and Xe+, the calculation results of the four models were contrastively analyzed. The results show that, for both Ar+ and Xe+ bombardment, the root mean square error of the new advanced model is the smallest and the goodness of fit is the largest, which means the new advanced model is better than other three models. Under the low energy condition, the new advanced model can calculate the sputtering yield of SiO2 bombarded by Ar+ and Xe+ more accurately.

Key words: argon ion, xenon ion, silicon dioxide, sputtering, improvement

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