北京航空航天大学学报 ›› 2000, Vol. 26 ›› Issue (2): 133-136.

• 论文 • 上一篇    下一篇

量子阱激光器的Pspice电路温度模型

杨文革, 李铮   

  1. 北京航空航天大学 电子工程系
  • 收稿日期:1998-09-15 出版日期:2000-02-29 发布日期:2010-09-27
  • 作者简介:杨文革(1966-),男,江西金溪人,讲师,100083,北京.
  • 基金资助:

    航空科学基金资助项目(96F51065)

Pspice Circuit Temperature Model of the Quantum Well Laser

YANG Wen-ge, LI Zheng   

  1. Beijing University of Aeronautics and Astronautics,Dept. of Electronic Engineering
  • Received:1998-09-15 Online:2000-02-29 Published:2010-09-27

摘要: 在考虑量子阱激光器的温度特性基础上,对激光器的速率方程进行了适用性修正,增加了与温度相关的势垒区的辐射复合电流Ibr、非辐射复合电流Ibnr和有源区的非辐射复合电流Iwnr、俄歇复合电流Ia等项,并根据修正后的速率方程得出了量子阱激光器的大信号等效 Pspice电路温度模型和直流稳态工作时的等效Pspice电路温度模型,然后采用GaAS/AlGaAS 量子阱激光器,根据量子阱激光器直流稳态工作时的等效Pspice电路温度模型对量子阱激光器的输出光功率、驱动电流和结点温度之间特性进行了模拟,得出它们之间的关系曲线.

Abstract: By researching the temperature characteristics of the quantum well laser, the rate equation of quantum-well laser is modified, and in the rate equation, these currents which are contacted with temperature are added. These currents include radiative recombination current and nonradiative recombination current of the barriers and nonradiative recombination current and auger recombination current of the active region. With the modified rate equation, a new large-signal equivalent circuit temperature model and circuit temperature model of steady state for quantum-well laser are obtained. In the simulation, GaAS/AlGaAS quantum-well laser is adopted to analyze the temperature characteristics of laser. Finally, the results of simulation can explain the relation of the optical power, injection current and temperature.

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