北京航空航天大学学报 ›› 2000, Vol. 26 ›› Issue (4): 485-489.

• 论文 • 上一篇    下一篇

掺磷纳米硅薄膜电导及压阻效应的研究

陈晨, 何宇亮, 祁祥麟   

  1. 北京航空航天大学 理学院
  • 收稿日期:1999-01-20 发布日期:2010-11-19
  • 作者简介:陈 晨(1977-),女,北京人,学士,100083,北京.
  • 基金资助:

    国家自然科学基金资助项目(69510211070)

Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films

CHEN Chen, HE Yu-liang, QI Xiang-lin   

  1. Beijing University of Aeronautics and Astronautics,School of Science
  • Received:1999-01-20 Published:2010-11-19

摘要: 研究了掺磷对纳米硅薄膜微结构和电学特性的影响.指出气相掺杂能使nc-Si:H膜中磷原子浓度达到原子分数5%的水平,掺杂效率可达η≈1.0%.掺磷后能使薄膜暗电导率提高两个数量级,达到σ=10-1~101S·cm-1,电导激活能ΔE=(1~6)×10-2eV水平.掺磷能促使nc-Si:H膜更加有序化且晶粒尺寸变小,这有利于使纳米硅薄膜往应用方向发展.

Abstract: A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc-Si:H) indicate that the room temperature dark conductivity σ is in the range of 10-1-101S·cm-1,two magnitudes higher than that of undoped nc-Si:H films. We also found the relationship between doping concentration Np and σ, that is strikingly similar to the pc-Si films. The conductivity activation energy ΔE of P-doped nc-Si:H is (1-3)×10-2eV, lower than the undoped nc-Si:H films. Otherwise, we investigated the piezo-resistance effect of P doped samples. Compared with undoped nc-Si:H samples, the piezo-resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.

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