北京航空航天大学学报 ›› 2008, Vol. 34 ›› Issue (12): 1402-1406.

• 论文 • 上一篇    下一篇

低电压(10V)下镁合金表面电化学氧化膜层

朱立群, 王喜眉, 张玲玲   

  1. 北京航空航天大学 材料科学与工程学院, 北京 100191
  • 收稿日期:2008-01-04 出版日期:2008-12-31 发布日期:2010-09-16
  • 作者简介:朱立群(1955-),男,山东荷泽人,教授,zhulq@buaa.edu.cn.

Electrochemical oxidation film of magnesium alloy at low voltage( 10V)

Zhu Liqun, Wang Ximei, Zhang Lingling   

  1. School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China
  • Received:2008-01-04 Online:2008-12-31 Published:2010-09-16

摘要: 基于高电压下氧化成膜有可能对镁合金基材机械性能造成损伤.研究了在以硅酸钠为主要成分的电解液中,施加10~110V交流电压对AZ91D镁合金表面进行电化学氧化的成膜过程.探讨了氧化电压、氧化时间等对膜层性能的影响规律,并且对所获得氧化膜层进行了微观分析.结果表明:在10V电压下氧化就能获得与70~110V电压下耐腐蚀性相当的氧化膜层;而且在10V交流电压下获得的氧化膜层形成过程为颗粒状形式—连接成块状—完整的膜层—交错叠式生长等4个阶段.

Abstract: Anodic oxidation coatings formed on the surface of magnesium alloys at higher voltage could degrade the mechanical performance of the magnesium alloys material. In order to overcome the shortcoming of mechanical performance reduction, the electrochemical oxidation films were prepared on AZ91D magnesium alloy in Na2SiO3 mainly contained solution and the electrochemical oxidation voltage which was supplied by AC power supply was from 10 V to 110 V. The growth process of the electrochemical oxidation on the surface of AZ91D magnesium alloys was studied. The influence of oxidation voltage and electrochemical oxidation time on the oxidation films was discussed. The microstructure of the electrochemical oxidation films formed at different oxidation voltage and time were analyzed as well. The results show that the corrosion resistance of the electrochemical oxidation films formed at 10 V is as good as that formed at 70~110 V. The growth process of the electrochemical oxidation films formed at 10 V could be summarized under four steps which are grain-like, block-like, integrated insulating and cross-layer films respectively.

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