基于片上实时监测与自适应补偿的抗总剂量带隙基准

郭仲杰; 任瑗; 王亚朋; 邱子忆; 李梦丽

doi:10.13700/j.bh.1001-5965.2023.0697

基于片上实时监测与自适应补偿的抗总剂量带隙基准

doi: 10.13700/j.bh.1001-5965.2023.0697

西安理工大学自动化与信息工程学院，西安 710048

基金项目:

国家自然科学基金(62171367)；陕西省重点研发计划项目(2021GY-060)；陕西省创新能力支撑计划项目(2022TD-39)；西安理工大学校企协同基金(252062213)

详细信息

通讯作者:
E-mail：zjguo@xaut.edu.cn

中图分类号: TN492
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- 被引次数: 0
出版历程
- 收稿日期: 2023-10-27
- 录用日期: 2023-12-07
- 网络出版日期: 2023-12-19
- 整期出版日期: 2025-12-31

Based on on-chip real-time monitoring with adaptive compensation for anti-total dose bandgap reference

School of Automation and Information Engineering，Xi’an University of Technology，Xi’an 710048，China

Funds:

National Natural Science Foundation of China (62171367); Key Research and Development Plan of Shaanxi Province (2021GY-060); Shaanxi Innovation Capability Support Programme Project(2022TD-39); Xi’an University of Technology University-Enterprise Collaboration Fund (252062213)

More Information

Corresponding author: E-mail：zjguo@xaut.edu.cn

摘要

摘要:
带隙基准电路在总剂量辐射环境下会出现双极晶体管基极电流泄漏，电流增益下降，从而造成带隙基准输出电压偏移，使得带隙基准的可靠性下降。针对传统带隙基准基于工艺、版图和器件的总剂量加固方法会带来的成本过高、版图面积过大、普适性不高等问题，提出一种片上总剂量实时监测与自适应补偿方法，实现电路级的总剂量加固，提高了带隙基准的抗辐射能力。基于0.18 μm BCD工艺对所提方法进行具体电路设计、后端物理实现与全面验证，结果表明：不同工艺角下，分别在总剂量辐照为100～300 krad (Si)辐射条件下，带隙基准的输出电压偏移由加固前偏移电压为3.4～18.5 mV (100～300 krad)改善为加固后最大偏移电压为1 mV (100～300 krad)，为电路与系统级的带隙基准抗辐照加固设计提供了一种新方法。
- 总剂量效应 /
- 带隙基准 /
- 自适应补偿 /
- 电路级加固 /
- 实时监测
Abstract:
Bipolar transistor base current leakage and a drop in current gain will occur in bandgap reference circuits exposed to total dose radiation. This will cause the output voltage of the bandgap reference to move and its dependability to decline. To address the issues of high cost, large layout area, and low universality that traditional total dose reinforcement methods for bandgap references based on process, layout, and device can bring, this method is suggested. An on-chip total dose real-time monitoring and adaptive compensation method is proposed to realize circuit-level total dose reinforcement and improve the radiation resistance of bandgap references. Based on the 0.18 μm BCD (Bipolar-CMOS-DMOS) process, specific circuit design, back-end physical implementation and comprehensive verification of the proposed method are carried out. Under radiation conditions of 100−300 krad (Si) under various process angles, the results demonstrate that the output voltage offset of the bandgap reference is improved from 3.4−18.5 mV voltage offset (100−300 krad) prior to reinforcement to the maximum offset voltage following reinforcement, which is 1 mV (100−300 krad). This provides a new method for designing irradiation-resistant reinforcement of bandgap references at the circuit and system levels.
- total dose effect /
- bandgap reference /
- adaptive compensation /
- circuit-level hardening /
- real-time monitoring

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图 1 带隙基准电路

Figure 1. Bandgap reference circuit

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图 2 总剂量效应监测与加固电路

Figure 2. Total dose effect monitoring and reinforcement circuit

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图 3 加固后的带隙基准电路

Figure 3. Hardened bandgap reference circuit

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图 4 带隙基准版图

Figure 4. Bandgap layout

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图 5 总剂量加固电路版图

Figure 5. Total dose reinforcement circuit layout

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图 6 未辐射前带隙基准电路

Figure 6. Unradiated front bandgap reference circuit

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图 7 TT工艺角下，辐照后的带隙基准电压

Figure 7. Bandgap reference voltage after irradiation at TT process angle

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图 8 FF工艺角下，辐照后的带隙基准电压

Figure 8. Bandgap reference voltage after irradiation at FF process angle

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图 9 SS工艺角下，辐照后的带隙基准电压

Figure 9. Bandgap reference voltage after irradiation at SS process angle

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图 10 TT工艺角下，加固后的带隙基准电压

Figure 10. Bandgap reference voltage after reinforcement at TT process angle

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图 11 SS工艺角下，加固后的带隙基准电压

Figure 11. Bandgap reference voltage after reinforcement at SS process angle

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图 12 FF工艺角下，加固后的带隙基准电压

Figure 12. Bandgap reference voltage after reinforcement at FF process angle

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表 1 不同工艺角下加固前后对比

Table 1. Comparison of reinforcement before and after different process angles

工艺角	输出电压/V				加固后的输出电压范围/V
工艺角	辐照前总剂量辐照	总剂量辐照为100 krad（Si）	总剂量辐照为200 krad（Si）	总剂量辐照为300 krad（Si）	加固后的输出电压范围/V
TT	1.2020	1.2066	1.2117	1.2168	1.20168～1.20245
SS	1.2165	1.2224	1.2285	1.2349	1.21570～1.21650
FF	1.1895	1.1930	1.1969	1.2008	1.18900～1.19030

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表 2 与其他文献的对比

Table 2. Comparison with other literature

方法	工艺	总剂量辐照/krad（Si）	输出电压（典型值）/V	输出电压漂移/mV	温度范围/℃
本文	0.18 μm BCD	0～300	1.202	1.0	−55～125
文献[4]	0.13 μm CMOS	400	0.600	2.0	−55～125
文献[5]	0.6 μm CMOS	300	−1.270	15.2	−55～125
文献[6]	BJT	100	1.250	5.0
文献[8]	65 nm CMOS		0.300	18.0	−10～50
文献[9]	0.5 μm CMOS	0～300	1.250	3.0	−50～125

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