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摘要:
随着工艺尺寸的微缩，单粒子效应成为航天器故障的重要因素之一，单粒子功能中断(SEFI)在先进工艺节点集成电路中日益突出。磁性随机存储器(MRAM)作为一种高速读写的新型存储器件，存储单元抗辐射性能优异，但其外围电路对单粒子效应更为敏感。利用脉冲激光分析SEFI对芯片的功能影响是一种高效方法。采用脉冲激光聚焦微束定位其敏感区域位于MRAM外围读电路中的控制模块，读0循环下SEFI的等效LET阈值为25 $ (\text{MeV}\cdot {\text{cm}}^{2})/\text{mg} $，发生SEFI时数据呈现百万级别的翻转错误，其翻转比特数随辐照的持续而不断上升，电流持续上升超过3 mA。分析发现，发生翻转时电流在控制端口存在正反馈效应，对MRAM的读电路通过电阻等效存储单元来建立仿真模型，得到了控制模块、灵敏放大和内存单元之间形成环路反馈结论。同时，利用电路级仿真软件对MRAM敏感区域控制模块进行单粒子故障注入，发现，控制模块同时控制的灵敏放大器(SA)单元数目越多，SA发生输出错误的时间越快。当超过3个SA被同时控制时，越易受辐照影响而发生功能中断。基于上述研究，建议从MRAM外围电路结构上抑制环路反馈，或将控制模块与SA之间采用异步处理进行抗辐射加固设计。
Abstract:The single-event functional interruption (SEFI) has grown in importance in advanced process node integrated circuits, and the single-event effect has become one of the key causes of spacecraft failure as process sizes have shrunk. As a new type of memory device with high-speed reading and writing, the magnetic random access memory (MRAM) has excellent radiation resistance of the memory cell, but its peripheral circuits are more sensitive to single-event effects. Pulsed laser analysis of the functional effect of SEFI on chips is an efficient method. The pulsed laser focusing micro-beam is used to locate the control module whose sensitive area is located in the peripheral reading circuit of MRAM, and the equivalent LET threshold of SEFI under the reading 0 cycle is 25 $ (\mathrm{MeV}\cdot{\text{cm}}^{2})/\text{mg} $, and the data presents a million-level flip error when SEFI occurs, and the number of flip bits continues to rise with the continuation of irradiation, and the current continues to rise by more than 3 mA. The analysis shows that there is a positive feedback effect of the current on the control port when the flip occurs, and the simulation model of the MRAM reading circuit is established through the resistor-equivalent memory unit, and the loop feedback conclusion between the control module, the sensitive amplification, and the memory unit is obtained. Simultaneously, single-event faults are injected into the MRAM sensitive area control module using circuit-level simulation software. It is discovered that the more sense amplifier (SA) units that are simultaneously controlled by the control module, the faster the SA’s output error time. It is also discovered that the more SA that are simultaneously controlled, the more vulnerable they are to irradiation and function interruption. Based on the above research, it is proposed to suppress the “loop feedback” from the MRAM peripheral circuit structure or use asynchronous processing between the control module and the SA for the anti-radiation reinforcement design.
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Key words:
- single-event effects /
- single-event upset /
- single event function interruption /
- pulsed laser /
- MRAM
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图 2 芯片背部激光红外成像扫描示意图
Figure 2. Schematic diagram of laser infrared imaging scanning on the rear surface of a chip
图 4 不同LET值下的翻转数和工作电流
Figure 4. Number of flips and operating current under different LET values
图 7 MRAM中控制模块、SA以及内存单元的相互作用
Figure 7. Schematic diagram of the overall simplification of the MRAM read circuit
图 8 脉冲注入控制模块，连接不同数目SA时的输出电压
Figure 8. Pulse injection control module with output voltage when connecting different numbers of SAs
图 9 脉冲注入控制模块，连接不同数目SA时的使能电压SAE
Figure 9. Pulse injection control module with enabling voltage SAE when connected to different number of SAs
表 1 辐照中芯片产生的单粒子效应
Table 1. The single-event effect produced by the chip in irradiation
效应 现象 恢复操作 SEU 在下一个读取命令到来时，消失 自恢复 在下一个读取命令到来时，会增大 自恢复 在下一个读取命令到来时不会消失，不随着辐照时间的增加而变化 关闭激光或直接重写 百万级SEU 数据百万级翻转，在下一个读循环到来时持续增大 关闭激光或直接重写 SEFI 读取功能失效，电流增大至超过3 mA，下一个读取命令到来时消失 自恢复 读取功能失效，无法正常读取数据，电流增大至超过3 mA，激光停止后消失 关闭激光 
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表 2 SEFI时的翻转错误数和电流值（读0状态下）
Table 2. Number of upset errors and current value in SEFI (read 0)
等效LET/
($ (\mathrm{MeV}\cdot {\text{cm}}^{2})\cdot \text{mg}^{-1} $)翻转
错误数/bit翻转
电流/mA25 1597273 2.7063 1599136 2.7451 1613194 3.0174 3.0264 3.073 3.1622 32 1786082 2.9682 1987861 3.0652 3.2107 3.4532 35 1877612 2.9819 1991041 3.1033 FALL 3.3049 3.5719 注：正常工作电流为2.57、2.425和 2.5414 mA，均值约为2.5066 mA。
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