Mechanism of anomalies in operational amplifier induced by proton deep charge-discharge effects
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摘要:
中高能太阳质子和银河宇宙线作为在深空轨道运行的航天器主要遭遇的辐射环境，大量入射至电介质材料将诱发深层充放电效应，导致电子器件工作状态异常。以LM124运算放大电路为研究示例，使用中高能质子加速器研究深空质子致深层充放电效应诱发电路产生异常的特征规律，同时结合H-集成电路性能分析电路仿真程序(HSPICE)仿真研究运算放大电路的深层充放电效应敏感区域与机理。结果表明：质子深层充电诱发的航天器静电放电(SESD)将导致运算放大电路输出异常瞬态，输出瞬态的幅值与SESD脉冲的幅值正相关，瞬态的持续时间与电路工作状态有关；电路的负电源输入端是SESD的敏感区域；输入控制晶体管与增益晶体管受SESD影响输出电流瞬态并导致电路输出异常是主要的故障机理。
Abstract:When solar protons and galactic cosmic rays, the primary radiation environments in deep space, accumulate in the dielectric material, they can cause spacecraft electrostatic discharge induced by charging (SESD), which can cause abnormalities in electronic devices. The LM124 integrated operational amplifier are used to study the characteristics of anomalies. The H-simulation program with integrated circuit enphasis (HSPICE) simulation is used to study the SESD sensitive region and mechanism of anomalies. The findings suggest that the output pin may experience transients due to the SESD transient. The amplitude of the output transient is positively associated with the amplitude of the SESD transient, and the duration of the output transient is associated with the circuit operating state. The negative power pin is the SESD sensitive region. The current transient in the input-control transistors and gain transistors caused by SESD induces output voltage anomalies.
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图 6 全管脚注入模式SESD诱发电路输出瞬态
Figure 6. Circuit output transients with SESD all pin injection mode
图 7 单管脚注入模式SESD诱发电路输出瞬态
Figure 7. Circuit output transients with SESD single pin injection mode
图 8 SESD脉冲注入晶体管诱发电压跟随模式输出瞬态特征
Figure 8. Characteristics of output voltage in transistor caused by SESD transient with voltage following mode
图 9 SESD脉冲注入晶体管诱发电路增益模式输出瞬态特征
Figure 9. Characteristics of output voltage in transistor caused by SESD transient with voltage gain mode
图 10 SESD脉冲注入输入控制晶体管Q3发射极诱发Q3与Q9产生的电流瞬态
Figure 10. Current transients in Q3 and Q9 induced by SESD transient injected into source of Q3
图 11 SESD脉冲注入输入控制晶体管Q4发射极诱发Q4与Q9产生的电流瞬态
Figure 11. Current transients in Q4 and Q9 induced by SESD transient injected into source of Q4
图 12 SESD脉冲注入增益晶体管Q9与偏置晶体管Q10发射极对其发射-集电电流的影响
Figure 12. Current transients in Q9 and Q10 induced by SESD transient injected into source of Q9 and Q10
表 1 运算放大电路输出瞬态特征
Table 1. Transient characteristics of operational amplifier circuit outputs
放电材料
厚度/mm振幅/V 持续时间/μs 电压跟随 非反向增益 反向增益 电压跟随 非反向增益 反向增益 15.5 7.1 7.3 7.4 13.8 24.1 18.7 21.5 2.9 2.8 3.2 14.9 21.2 26.5 
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表 2 运算放大电路SESD敏感区域
Table 2. SESD sensitive regions of operational amplifier circuits
SESD脉冲
注入位置振幅/V 持续时间/μs 电压跟随模式 增益模式 电压跟随模式 增益模式 $V_{\mathrm{DD}}^+ $ 0.03 0.04 0.21 0.23 $V_{\mathrm{DD}}^- $ 3.28 2.75 10.18 25.00 $V_{\mathrm{in}} $ 0.01 0.08 0.79 0.01
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