掺杂nc-Si:H薄膜中纳米硅晶粒的择优生长

韦文生; 王天民; 张春熹; 李国华

掺杂nc-Si:H薄膜中纳米硅晶粒的择优生长

1.
北京航空航天大学理学院, 北京 100083
2. 北京航空航天大学宇航学院, 北京 100083
3. 中国科学院?半导体研究所, 北京 100080

基金项目: 863计划资助项目; 高校博士点基金资助项目(200220006037)

详细信息

作者简介:
韦文生(1966-),男,广西平乐人,博士生, weiwensheng287@sohu.com.

中图分类号: O 613.72; O 613.8⁺1; O 613.62
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- 文章访问数: 2342
- HTML全文浏览量: 24
- PDF下载量: 9
- 被引次数: 0
出版历程
- 收稿日期: 2002-07-16
- 网络出版日期: 2003-09-30

Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film

1.
School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China
2. School of Astronautics, Beijing University of Aeronautics and Astronautics, Beijing 100083, China
3. Institute of Semiconductor, Chinese Academy of Science, Beijing 100080, China

摘要

摘要: 发现PECVD生长的系列掺杂氢化纳米硅(nc-Si:H)薄膜中纳米硅晶粒(nc-Si)有择优生长的趋势.用Raman、XRD、AFM、HRTEM等方法研究其微观结构时发现:掺磷的nc-Si:H薄膜XRD 峰位的二倍衍射角约为33°.掺硼nc-Si:H薄膜的XRD峰位的二倍衍射角约为47°.用自由能密度与序参量的关系结合实验参数分析得到:较高的衬底温度引起序参量改变,使掺磷nc-Si:H薄膜中nc-Si的晶面择优生长.适当的电场作用引起序参量改变,导致掺硼nc-Si:H薄膜在一定的自由能密度范围内nc-Si的晶面择优生长.
- 掺杂 /
- 电场 /
- 温度 /
- 择优生长 /
- nc-Si:H薄膜 /
- 纳米硅晶粒
Abstract: The preferred growth of nanosized crystal silicon (nc-Si) in doped hydrogenated nanocrystalline silicon (nc-Si:H) films which were prepared using plasma enhanced chemical vapor deposition (PECVD) system by RF(13.56 MHz) and DC bias stimulating was found. Its microstructure was investigated using X-ray diffraction (XRD), Raman spectrum meter, atomic force microscope (AFM) and high resolution transmission electronic microscope (HRTEM). Nc-Si about 10 nm was distributed in the silicon-hydrogen amorphous networks in the films. The peaks of XRD spectra of phosphorus doped nc-Si:H films was at 2θ≈33°, the exponent of crystalline plane was (130). The peaks of XRD spectra of boron doped nc-Si:H films was at 2θ≈47°, the exponent of crystalline plane was (220), respectively. The considerable reasons were investigated. The relation between size of nc-Si, crystalline volume fraction and depositing parameters were studied.
- doped /
- electric field /
- temperature /
- perferred growth /
- hydrogenated nanocrystalline silicon film /
- nanosized crystal silicon

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参考文献(1)

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