Pspice Circuit Temperature Model of the Quantum Well Laser
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摘要: 在考虑量子阱激光器的温度特性基础上,对激光器的速率方程进行了适用性修正,增加了与温度相关的势垒区的辐射复合电流Ibr、非辐射复合电流Ibnr和有源区的非辐射复合电流Iwnr、俄歇复合电流Ia等项,并根据修正后的速率方程得出了量子阱激光器的大信号等效 Pspice电路温度模型和直流稳态工作时的等效Pspice电路温度模型,然后采用GaAS/AlGaAS 量子阱激光器,根据量子阱激光器直流稳态工作时的等效Pspice电路温度模型对量子阱激光器的输出光功率、驱动电流和结点温度之间特性进行了模拟,得出它们之间的关系曲线.Abstract: By researching the temperature characteristics of the quantum well laser, the rate equation of quantum-well laser is modified, and in the rate equation, these currents which are contacted with temperature are added. These currents include radiative recombination current and nonradiative recombination current of the barriers and nonradiative recombination current and auger recombination current of the active region. With the modified rate equation, a new large-signal equivalent circuit temperature model and circuit temperature model of steady state for quantum-well laser are obtained. In the simulation, GaAS/AlGaAS quantum-well laser is adopted to analyze the temperature characteristics of laser. Finally, the results of simulation can explain the relation of the optical power, injection current and temperature.
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Key words:
- semiconductor lasers /
- temperature effect /
- simulation /
- quantum well /
- circuit model
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[1] 任新根,徐国萍,董天临.半导体激光器大信号等效电路模型的参数提取[J].电子学报,1994,22(2):27~34. [2]Tucker R S. Large-signal circuit model for simulation of injection-laser modulation dynamics[J]. IEE PROC, 1981, 128(5):180~184. [3]Tucker R S. Circuit model of double-heterojunction lasers below threshold[J]. IEE PROC I,Solid-state and Electron Devices, 1981,128(3):101~106. [4]Habermayer I. Nonlinear circuit model for semiconductor lasers[J]. Opt Quantum Electron, 1981, 13(6):461~468. [5]Katz J, Margalit S. The intrinsic electrical equivalent circuit of a laser diode[J]. IEEE Journal of Quantum Electronics,1981,17(1):4~7. [6]Tucker R S , Pope D J. Microwave circuit models of semiconductor inject lasers[J]. IEEE Transactions on Microwave Theory Techniques,1983,31(3):289~294. [7]David S G, Kang D M. Modeling of quantum well lasers for computer-aided analysis of optoelectronic integrated circuits[J]. IEEE Journal of Quantum Electronics,1990,26(7):1206~1215. [8]Lu M F, Deng J S. Equivalent circuit model of quantum well lasers[J]. IEEE Journal of Quantum Electronics ,1995,31(8):1418~1422. [9]张敬明,徐遵图.量子阱激光器光增益温度关系及对激射特性的影响[J]. 半导体学报,1995,16(9):655~658. [10] Tucker R S, David J P. Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor lasers[J]. IEEE Journal of Quantum Electronics,1983,19(7):1179~1183. [11]姚立真.通用电路模拟技术及软件应用SPICE和PSPICE[M]. 北京:电子工业出版社,1994. -
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