电子照射对硅漂移探测器性能的影响

张斌全; 韦飞; 冷双; 王世金

电子照射对硅漂移探测器性能的影响

中国科学院空间科学与应用研究中心, 北京 100190

详细信息

中图分类号: V476.4
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出版历程
- 收稿日期: 2011-11-19
- 网络出版日期: 2013-02-28

Effect on the characteristic of silicon drift detector by electron exposure

Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China

摘要

摘要: 由于高能电子辐射的长期照射,新一代太阳X射线探测器硅漂移传感器的探测性能可能发生变化.通过用电子放射源模拟空间电子对硅漂移探测器进行辐射照射试验,以测试电子照射对传感器能量分辨率、效率、信号幅度等性能的影响.试验结果表明,长期的电子照射造成硅漂移探测器面损伤和体损伤,使其漏电流增大,信号幅度减小,能量分辨率也受到照射的影响,而探测效率未发生变化.
- 太阳X射线 /
- 硅漂移探测器 /
- 电子 /
- 照射
Abstract: Detection characteristics of the silicon drift detector (SDD), which is used in the new generation of solar x-ray detector onboard FY-2 satellite, might change due to the exposure of long-term high-energy electron radiation. To test the effect on its energy resolution, efficiency, signal amplitude and other characteristics by electron exposure, an SDD was irradiated using electron radionuclide sources, which is to simulate the space electron radiation. Experiment result shows that both surface damage and bulk damage occur after long-term electron irradiation on the SDD. The SDD's leakage currents increase; its signal amplitude decrease and energy resolution is also affected by the electron irradiation. No changes in detection efficiency are found.
- solar X-ray /
- silicon drift detector /
- electron /
- irradiation

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参考文献(13)

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